K5P2880YCM Datasheet, PDF (13/29 Pages) Samsung semiconductor – Multi-Chip Package MEMORY 128M Bit 16Mx8 Nand Flash Memory / 8M Bit 1Mx8/512Kx16 Full CMOS SRAM

K5P2880YCM - T085
Figure 12. Flash Erase Flow Chart
Start
Write 60h
Write Block Address
Write D0h
Read Status Register
Figure 13. Flash Read Flow Chart
Start
Write 00h
Write Address
Read Data
ECC Generation
I/O 6 = 1 ?
No
or R/B = 1 ?
*
No
Erase Error
Yes
I/O 0 = 0 ?
Yes
Erase Completed
No
Reclaim the Error
Verify ECC
Yes
Page Read Completed
* : If erase operation results in an error, map out
the failing block and replace it with another block.
Figure 14. Flash Block Replacement
Buffer
memory
error occurs
Page a
Block A
When the error happens with page "a" of Block "A", try
to write the data into another Block "B" from an exter-
nal buffer. Then, prevent further system access to
Block "A" (by creating a "invalid block" table or other
appropriate scheme.)
Block B
- 13 -
Revision 0.0
June. 2001