K5P2880YCM Datasheet, PDF (19/29 Pages) Samsung semiconductor – Multi-Chip Package MEMORY 128M Bit 16Mx8 Nand Flash Memory / 8M Bit 1Mx8/512Kx16 Full CMOS SRAM

K5P2880YCM - T085
Flash Program/Erase Characteristics
Parameter
Symbol
Min
Typ
Max
Program Time
tPROG
-
300
600
Number of Partial Program Cycles
in the Same Page
Main Array
Spare Array
Nop
-
-
-
-
2
3
Block Erase Time
tBERS
-
2
4
Flash AC Timing Characteristics for Command / Address / Data Input
Parameter
Symbol
Min
Max
CLE Set-up Time
tCLS
0
-
CLE Hold Time
tCLH
10
-
CE Setup Time
tCS
0
-
CE Hold Time
tCH
10
-
WE Pulse Width
ALE Setup Time
tWP
25
-
tALS
0
-
ALE Hold Time
tALH
10
-
Data Setup Time
tDS
20
-
Data Hold Time
tDH
10
-
Write Cycle Time
tWC
50
-
WE High Hold Time
tWH
15
-
Flash AC Characteristics for Operation
Parameter
Data Transfer from Cell to Register
ALE to RE Delay( ID read )
ALE to RE Delay(Read cycle)
CE Access Time
Ready to RE Low
RE Pulse Width
WE High to Busy
Read Cycle Time
RE Access Time
RE High to Output Hi-Z
CE High to Output Hi-Z
RE High Hold Time
Output Hi-Z to RE Low
WE High to RE Low
Device Resetting Time(Read/Program/Erase)
Symbol
Min
tR
-
tAR1
20
tAR2
50
tCEA
-
tRR
20
tRP
30
tWB
-
tRC
50
tREA
-
tRHZ
15
tCHZ
-
tREH
15
tIR
0
tWHR
60
tRST
-
NOTE :
1. If reset command(FFh) is written at Ready state, the device goes into Busy for maximum 5us
Max
10
-
-
45
-
-
100
-
35
30
20
-
-
-
5/10/500⁽¹⁾
Unit
µs
cycles
cycles
ms
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
Unit
µs
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
µs
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Revision 0.0
June. 2001