K5P2880YCM Datasheet, PDF (16/29 Pages) Samsung semiconductor – Multi-Chip Package MEMORY 128M Bit 16Mx8 Nand Flash Memory / 8M Bit 1Mx8/512Kx16 Full CMOS SRAM

K5P2880YCM - T085
ABSOLUTE MAXIMUM RATINGS
Parameter
Voltage on any pin relative to VSS
Temperature Under Bias
Storage Temperature
Symbol
VIN
VCCf, VCCs
VccQ
TBIAS
TSTG
Rating
-0.5 to (Vccf,Vccs)+ 0.3
-0.2 to 3.6V
-0.2 to 3.6V
-25 to + 125
-65 to + 150
Unit
V
V
°C
°C
NOTE :
1. Minimum DC voltage is -0.5V on input/output pins. During transitions, this level may undershoot to -2.0V for periods <30ns.
Maximum DC voltage on input/output pins is VCCQ+0.3V which, during transitions, may overshoot to VCC+2.0V for periods <20ns.
2. Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are exceeded. Functional operation should be restricted to the conditions
as detailed in the operational sections of this data sheet. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
RECOMMENDED OPERATING CONDITIONS
(Voltage reference to GND, TA=-25 to 85°C)
Parameter
Symbol
Min
Typ.
Max
Unit
Supply Voltage
VCCf, VCCs
2.7
3.0
3.3
V
Supply Voltage
VCCQ
2.7
3.0
3.3
V
Supply Voltage
VSS
0
0
0
V
DC AND OPERATING CHARACTERISTICS(Recommended operating conditions otherwise noted.)
Parameter
Symbol
Test Conditions
Min
Max
Unit
Input Leakage Current
VCCf,VCCS=VCCfMax.,VCCSMax.
ILI
VCCQf=VCCQfMax.,VIN=VCCQf or GND
-
±10
µA
Output Leakage Current
VCCf,VCCS=VCCfMax.,VCCSMax.
ILO
VCCQf=VCCQfMax.,VIN=VCCQf or GND
-
±10
µA
Input Low Voltage Level, All inputs VIL
-0.4
0.4
Input High Voltage Level
VIH
VccQf-0.4 VccQf+0.4
Output Low Voltage Level
Vccf/=Vccf Min, Vccs=Vccs Min
VOL
IOL = 0.1mA
-
0.4
V
Output High Voltage Level
Vccf=Vccf Min, Vccs=Vccs Min.
VOH
IOH = -0.1mA
VccQ-0.3
-
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Revision 0.0
June. 2001