RX230 Datasheet, PDF (161/177 Pages) Renesas Technology Corp – 54-MHz 32-bit RX MCUs, built-in FPU, 88.56 DMIPS, up to 512-KB flash memory

RX230 Group, RX231 Group
5. Electrical Characteristics
5.14 E2 DataFlash Characteristics (Flash Memory for Data Storage)
Table 5.64 E2 DataFlash Characteristics (1)
Item
Reprogramming/erasure cycle*¹
Data hold time
After 10000 times of N_DPEC
After 100000 times of N_DPEC
After 1000000 times of N_DPEC
Symbol
N_DPEC
t_DDRP
Min.
100000
20*^2, *³
5*^2, *³
—
Typ.
1000000
—
—
1*^2, *³
Max.
—
—
—
—
Unit
Times
Year
Year
Year
Conditions
T_a = +85°C
T_a = +25°C
Note 1.
Note 2.
Note 3.
The reprogram/erase cycle is the number of erasing for each block. When the reprogram/erase cycle is n times (n = 100000),
erasing can be performed n times for each block. For instance, when 1-byte programming is performed 1000 times for different
addresses in a 1-Kbyte block and then the entire block is erased, the reprogram/erase cycle is counted as one. However,
programming the same address for several times as one erasing is not enabled (overwriting is prohibited).
Characteristic when the flash memory programmer is used and the self-programming library is provided from Renesas
Electronics.
These results are obtained from reliability testing.
Table 5.65 E2 DataFlash Characteristics (2)
: high-speed operating mode
Conditions: 2.7 V ≤ VCC = VCC_USB = AVCC0 ≤ 5.5 V, VSS = AVSS0 = VSS_USB = 0 V
Temperature range for the programming/erasure operation: T_a = –40 to +105°C
Item
Programming time
1 byte
Erasure time
1 Kbyte
8 Kbyte
Blank check time
1 byte
1 Kbyte
Erase operation forced stop time
DataFlash STOP recovery time
Symbol
t_DP1
t_DE1K
t_DE8K
t_DBC1
t_DBC1K
t_DSED
t_DSTOP
FCLK = 1 MHz
Min.
Typ.
—
95.0
—
19.5
—
119.8
—
—
—
—
—
—
5.0
—
Max.
797
498
2556
55.00
0.72
16.0
—
FCLK = 32 MHz
Unit
Min.
Typ. Max.
—
40.8
376
μs
—
6.2
230
ms
—
12.9
368
ms
—
—
16.1
μs
—
—
0.50 ms
—
—
10.7
μs
5.0
—
—
μs
Note:
Note:
Note:
The time until each operation of the flash memory is started after instructions are executed by software is not included.
The lower-limit frequency of FCLK is 1 MHz during programming or erasing of the flash memory. When using FCLK at below
4 MHz, the frequency can be set to 1 MHz, 2 MHz, or 3 MHz. A non-integer frequency such as 1.5 MHz cannot be set.
The frequency accuracy of FCLK must be within ±3.5%.
Table 5.66 E2 DataFlash Characteristics (3)
: middle-speed operating mode
Conditions: 1.8 V ≤ VCC0 = VCC_USB = AVCC0 ≤ 5.5 V, VSS = AVSS0 = VSS_USB = 0 V
Temperature range for the programming/erasure operation: T_a = –40 to +85°C
Item
Programming time
1 byte
Erasure time
1 Kbyte
8 Kbyte
Blank check time
1 byte
1 Kbyte
Erase operation forced stop time
DataFlash STOP recovery time
Symbol
t_DP1
t_DE1K
t_DE8K
t_DBC1
t_DBC1K
t_DSED
t_DSTOP
FCLK = 1 MHz
Min.
Typ.
—
135
—
19.6
—
120
—
—
—
—
—
—
0.72
—
Max.
1197
501
2558
85.0
0.72
28.0
—
FCLK = 8 MHz
Unit
Min.
Typ. Max.
—
86.5
823
μs
—
8.0
265
ms
27.7
669
ms
—
—
50.9
μs
—
—
1.45 ms
—
—
21.3
μs
0.72
—
—
μs
Note:
Note:
Note:
The time until each operation of the flash memory is started after instructions are executed by software is not included.
The lower-limit frequency of FCLK is 1 MHz during programming or erasing of the flash memory. When using FCLK at below
4 MHz, the frequency can be set to 1 MHz, 2 MHz, or 3 MHz. A non-integer frequency such as 1.5 MHz cannot be set.
The frequency accuracy of FCLK must be within ±3.5%.
R01DS0261EJ0110 Rev.1.10
Oct 30, 2015
Page 161 of 177