RX230 Datasheet, PDF (160/177 Pages) Renesas Technology Corp – 54-MHz 32-bit RX MCUs, built-in FPU, 88.56 DMIPS, up to 512-KB flash memory

RX230 Group, RX231 Group
5. Electrical Characteristics
Table 5.63 ROM (Flash Memory for Code Storage) Characteristics (3) Middle-Speed Operating Mode
Conditions: 1.8 V ≤ VCC = VCC_USB = AVCC0 ≤ 5.5 V, VSS = AVSS0 = VSS_USB = 0 V
Temperature range for the programming/erasure operation: T_a = –40 to +85°C
FCLK = 1 MHz
FCLK = 8 MHz
Item
Symbol
Unit
Min.
Typ.
Max.
Min.
Typ.
Max.
Programming time
8-byte
t_P8
—
152
1367
—
97.9
936
μs
Erasure time
2-Kbyte
t_E2K
—
8.8
279.7
—
5.9
221
ms
512-Kbyte
t_E512K
—
(when block
erase
command is
used)
928
19221
—
191
4108
ms
512-Kbyte
t_EA512K
—
(when all-
block erase
command is
used)
Blank check time
8-byte
2-Kbyte
Erase operation forced stop time
Start-up area switching setting time
Access window time
ROM mode transition wait time 1
ROM mode transition wait time 2
t_BC8
—
t_BC2K
—
t_SED
—
t_SAS
—
t_AWS
—
t_DIS
2.0
t_MS
3.0
923
19015
—
—
85.0
—
—
1870
—
—
28.0
—
13.0
573.3
—
13.0
573.3
—
—
—
2.0
—
—
3.0
185
3901
ms
—
50.88
μs
—
402
μs
—
21.3
μs
7.7
451
ms
7.7
451
ms
—
—
μs
—
—
μs
Note:
Note:
Note:
The time until each operation of the flash memory is started after instructions are executed by software is not included.
The lower-limit frequency of FCLK is 1 MHz during programming or erasing of the flash memory. When using FCLK at below
4 MHz, the frequency can be set to 1 MHz, 2 MHz, or 3 MHz. A non-integer frequency such as 1.5 MHz cannot be set.
The frequency accuracy of FCLK must be within ±3.5%.
R01DS0261EJ0110 Rev.1.10
Oct 30, 2015
Page 160 of 177