English
Language : 

RX230 Datasheet, PDF (126/177 Pages) Renesas Technology Corp – 54-MHz 32-bit RX MCUs, built-in FPU, 88.56 DMIPS, up to 512-KB flash memory
RX230 Group, RX231 Group
5. Electrical Characteristics
Table 5.36 Bus Timing (Multiplex bus) (1)
Conditions: 2.7 V ≤ VCC = VCC_USB = AVCC0 ≤ 5.5 V, VSS = AVSS0 = VSS_USB = 0 V,
fBCLK ≤ 32 MHz (BCLK pin output frequency ≤ 16 MHz), Ta = –40 to +105°C, VOH = VCC × 0.5, VOL = VCC × 0.5,
IOH = –1.0 mA, IOL = 1.0 mA, CL = 30 pF, when normal output is selected by the drive capacity control register
Item
Symbol
Min.
Max.
Unit
Test
Conditions
Address delay time
Byte control delay time
CS# delay time
RD# delay time
ALE delay time
Read data setup time
Read data hold time
WR# delay time
Write data delay time
Write data hold time
WAIT# setup time
WAIT# hold time
tAD
—
55
ns
Figure 5.43,
tBCD
—
55
ns
Figure 5.44
tCSD
—
55
ns
tRSD
—
55
ns
tALED
—
55
ns
tRDS
40
—
ns
tRDH
0
—
ns
tWRD
—
55
ns
tWDD
—
55
ns
tWDH
0
—
ns
tWTS
40
—
ns
Figure 5.42
tWTH
0
—
ns
Table 5.37 Bus Timing (Multiplex bus) (2)
Conditions: 1.8 V ≤ VCC = VCC_USB = AVCC0 < 5.5 V, VSS = AVSS0 = VSS_USB = 0 V,
fBCLK ≤ 16 MHz (BCLK pin output frequency ≤ 8 MHz), Ta = –40 to +105°C, VOH = VCC × 0.5, VOL = VCC × 0.5,
IOH = –1.0 mA, IOL = 1.0 mA, CL = 30 pF, when normal output is selected by the drive capacity control register
Item
Symbol
Min.
Max.
Unit
Test
Conditions
Address delay time
Byte control delay time
CS# delay time
RD# delay time
ALE delay time
Read data setup time
Read data hold time
WR# delay time
Write data delay time
Write data hold time
WAIT# setup time
WAIT# hold time
tAD
—
90
ns
Figure 5.43,
tBCD
—
90
ns
Figure 5.44
tCSD
—
90
ns
tRSD
—
90
ns
tALED
—
90
ns
tRDS
60
—
ns
tRDH
0
—
ns
tWRD
—
90
ns
tWDD
—
90
ns
tWDH
0
—
ns
tWTS
60
—
ns
Figure 5.42
tWTH
0
—
ns
R01DS0261EJ0110 Rev.1.10
Oct 30, 2015
Page 126 of 177