HYB18T512400AF Datasheet, PDF (54/58 Pages) Infineon Technologies AG – 512-Mbit DDR2 SDRAM

Internet Data Sheet
HYB18T512[40/80/16]0AF(L)–[3/3S/3.7/5]
512-Mbit DDR2 SDRAM
9
Product Nomenclature
For reference the Qimonda SDRAM component nomenclature is enclosed in this chapter.
Example for
DDR2 DRAM
Field Number
1
2
3
HYB 18
T
4
5
6
512 16
TABLE 45
Nomenclature Fields and Examples
7
8
9
10
11
0
A
C
–3.7 ––
Field
1
2
3
4
Description
QIMONDA
Component Prefix
Interface Voltage [V]
DRAM Technology
Component Density [Mbit]
5+6
Number of I/Os
7
Product Variations
8
Die Revision
9
Package,
Lead-Free Status
10
Speed Grade
11
N/A for Components
Values
HYB
18
T
256
512
1G
40
80
160
0 .. 9
A
B
C
C
F
–1.9
–2.5F
–2.5
–3
–3S
–3.7
–5
––
TABLE 46
DDR2 Memory Components
Coding
Constant
SSTL_18
DDR2
256 M
512 M
1 Gb
×4
×8
× 16
look up table
First
Second
Third
FBGA,
lead-containing
FBGA, lead-free
DDR2–1066
DDR2–800 5–5–5
DDR2–800 6–6–6
DDR2–667 4–4–4
DDR2–667 5–5–5
DDR2–533 4–4–4
DDR2–400 3–3–3
––
Rev. 1.71, 2007-01
54
03062006-CPCN-4867