HYB18T512400AF Datasheet, PDF (3/58 Pages) Infineon Technologies AG – 512-Mbit DDR2 SDRAM

Internet Data Sheet
1
Overview
HYB18T512[40/80/16]0AF(L)–[3/3S/3.7/5]
512-Mbit DDR2 SDRAM
This chapter gives an overview of the 512-Mbit DDR2 SDRAM product family and describes its main characteristics.
1.1
Features
The 512-Mbit DDR2 SDRAM offers the following key features:
• 1.8 V ± 0.1 V Power Supply 1.8 V ± 0.1 V (SSTL_18)
compatible I/O
• DRAM organisations with 4, 8 and 16 data in/outputs
• Double Data Rate architecture: two data transfers per
clock cycle, four internal banks for concurrent operation
• CAS Latency: 3, 4 and 5
• Burst Length: 4 and 8
• Differential clock inputs (CK and CK)
• Bi-directional, differential data strobes (DQS and DQS) are
transmitted / received with data. Edge aligned with read
data and center-aligned with write data.
• DLL aligns DQ and DQS transitions with clock
• DQS can be disabled for single-ended data strobe
operation
• Commands entered on each positive clock edge, data and
data mask are referenced to both edges of DQS
• Data masks (DM) for write data
• Posted CAS by programmable additive latency for better
command and data bus efficiency
• Off-Chip-Driver impedance adjustment (OCD) and On-
Die-Termination (ODT) for better signal quality.
• Auto-Precharge operation for read and write bursts
• Auto-Refresh, Self-Refresh and power saving Power-
Down modes
• Average Refresh Period 7.8 µs at a T_CASE lower than
85 °C, 3.9 µs between 85 °C and 95 °C
• High Temperature Self Refresh Mode is supported
• Full and reduced Strength Data-Output Drivers
• 1KByte page size for × 4 & × 8, 2 KByte page size for × 16
• Lead-free Packages: P-TFBGA-60 for × 4 & × 8
components, P-TFBGA-84 for × 16 components
• RoHS Compliant Products¹⁾
Product Type Speed Code
–3
Speed Grade
DDR2–667C 4–4–4
Max. Clock Frequency @CL5
@CL4
@CL3
Min. RAS-CAS-Delay
Min. Row Precharge Time
Min. Row Active Time
Min. Row Cycle Time
f_CK5 333
f_CK4 333
f_CK3 200
t_RCD 12
t_RP 12
t_RAS 45
t_RC 57
TABLE 1
Performance table for –3(S)
–3S
Unit
DDR2–667D 5–5–5
333
266
200
15
15
45
60
—
MHz
MHz
MHz
ns
ns
ns
ns
1) RoHS Compliant Product: Restriction of the use of certain hazardous substances (RoHS) in electrical and electronic equipment as defined
in the directive 2002/95/EC issued by the European Parliament and of the Council of 27 January 2003. These substances include mercury,
lead, cadmium, hexavalent chromium, polybrominated biphenyls and polybrominated biphenyl ethers.
Rev. 1.71, 2007-01
3
03062006-CPCN-4867