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HYB18T512400AF Datasheet, PDF (38/58 Pages) Infineon Technologies AG – 512-Mbit DDR2 SDRAM | |||
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Internet Data Sheet
Symbol
â3
DDR2â667
Max.
IDD0
75
95
IDD1
90
110
IDD2N
50
IDD2P
5.5
IDD2P(L)
â
IDD2Q
40
IDD3N
50
IDD3P(MRS= 0) 19
IDD3P(MRS= 1) 6
IDD4R
130
150
IDD4W
140
170
IDD5B
140
IDD5D
6
IDD6
5.5
IDD6(L)
â
IDD7
155
240
1) For LowPower Components
2) MRS(12)=0
3) MRS(12)=1
4) 0 ⤠TCASE ⤠85°C
HYB18T512[40/80/16]0AF(L)â[3/3S/3.7/5]
512-Mbit DDR2 SDRAM
â3S
DDR2â667
Max.
71
90
85
104
50
5.5
â
40
50
19
6
130
150
140
170
140
6
5.5
â
147
228
TABLE 37
IDD Specification for HYB18T512xxxAF(L)
â3.7
â5
Unit
Note
DDR2â533
DDR2â400
Max.
65
80
75
90
40
5.5
2
30
40
16
5.5
90
115
95
130
130
6
5.5
2
145
220
Max.
55
70
60
75
32
5.5
â
25
35
13
5.5
70
85
80
110
120
6
5.5
â
140
210
mA
Ã4/Ã8
Ã16
mA
Ã4/Ã8
Ã16
mA
â
mA
â
mA
1)
mA
â
mA
â
mA
2)
mA
3)
mA
Ã4/Ã8
mA
Ã16
mA
Ã4/Ã8
mA
Ã16
mA
â
mA
4)
mA
4)
mA
1)4)
mA
Ã4/Ã8
mA
Ã16
Rev. 1.71, 2007-01
38
03062006-CPCN-4867
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