UPD78F4216A Datasheet, PDF (46/60 Pages) NEC – MOS INTEGRATED CIRCUIT

µPD78F4216A, 78F4218A, 78F4216AY, 78F4218AY
Flash Memory Programming Characteristics (VDD = AVDD = 1.9 to 5.5 V, VSS = AVSS = 0 V, VPP = 9.7
to 10.3 V)
(2) Serial write operation characteristics
Parameter
VPP setup time
VPP↑ setup time to VDD↑
RESET↑ set up time to VPP↑
VPP count start time from RESET↑
Count execution time
VPP counter high-level width
VPP counter low-level width
VPP counter noise elimination width
Symbol
tPSRON
tDRPSR
tPSRRF
tRFCF
tCOUNT
tCH
tCL
tNFW
Conditions
VPP high voltage
VPP high voltage
VPP high voltage
MIN.
TYP.
MAX.
Unit
1.0
µs
10
µs
1.0
µs
1.0
µs
1.0
ms
8.0
µs
8.0
µs
40
ns
Flash Memory Write Mode Setting Timing
VDD
VDD
0V
VPPH
VPP VPP
VPPL
VDD
RESET (input)
0V
tDRPSR
tRFCF
tCL
tPSRON tPSRRF
tCH
tCOUNT
46
Data Sheet U14125EJ1V0DS00