PIC18F2450_08 Datasheet, PDF (282/324 Pages) Microchip Technology – 28/40/44-Pin, High-Performance, 12 MIPS, Enhanced Flash, USB Microcontrollers with nanoWatt Technology

PIC18F2450/4450
TABLE 21-1: MEMORY PROGRAMMING REQUIREMENTS
DC Characteristics
Standard Operating Conditions (unless otherwise stated)
Operating temperature -40°C ≤ TA ≤ +85°C for industrial
Param
No.
Sym
Characteristic
Min Typ† Max Units
Conditions
Internal Program Memory
Programming Specifications⁽¹⁾
D110 VIHH Voltage on MCLR/VPP/RE3 pin 9.00
— 13.25 V (Note 2)
D113 IDDP Supply Current during
Programming
—
—
10 mA
Program Flash Memory
D130 EP Cell Endurance
10K 100K — E/W -40°C to +85°C
D131 VPR VDD for Read
VMIN
—
5.5
V VMIN = Minimum operating
voltage
D132 VIE VDD for Block Erase
4.5
—
5.5
V Using ICSP™ port
D132A VIW VDD for Externally Timed Erase 3.0
—
5.5
V Using ICSP port
or Write
D132B VPEW VDD for Self-Timed Write
VMIN
—
5.5
V VMIN = Minimum operating
voltage
D133 TIE ICSP™ Block Erase Cycle Time —
4
—
ms VDD > 4.5V
D133A TIW ICSP Erase or Write Cycle Time 1
(externally timed)
—
—
ms VDD > 4.5V
D133A TIW Self-Timed Write Cycle Time
—
2
—
ms
D134 TRETD Characteristic Retention
40
100
— Year Provided no other
specifications are violated
† Data in “Typ” column is at 5.0V, 25°C unless otherwise stated. These parameters are for design guidance
only and are not tested.
Note 1: These specifications are for programming the on-chip program memory through the use of table write
instructions.
2: Required only if Single-Supply Programming is disabled.
DS39760D-page 280
© 2008 Microchip Technology Inc.