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AC82GL40-SLB95 Datasheet, PDF (86/98 Pages) Intel Corporation – Intel® Celeron® Mobile Processor Dual-Core on 45-nm Process
Thermal Specifications and Design Considerations
Table 27.
Thermal Diode Parameters Using Diode Model
Symbol
Parameter
IFW
Forward Bias Current
n
Diode Ideality Factor
RT
Series Resistance
Min
5
1.000
2.79
Typ
1.009
4.52
Max
200
1.050
6.24
Unit
µA
Ω
Notes
1
2, 3, 4
2, 3, 5
NOTES:
1.
Intel does not support or recommend operation of the thermal diode under reverse bias.
Intel does not support or recommend operation of the thermal diode when the processor
power supplies are not within their specified tolerance range.
2.
Characterized across a temperature range of 50-100°C.
3.
Not 100% tested. Specified by design characterization.
4.
The ideality factor, n, represents the deviation from ideal diode behavior as exemplified by
the diode equation:
IFW = IS * (e qVD/nkT –1)
where IS = saturation current, q = electronic charge, VD = voltage across the diode, k =
Boltzmann Constant, and T = absolute temperature (Kelvin).
5.
The series resistance, RT, is provided to allow for a more accurate measurement of the
junction temperature. RT, as defined, includes the lands of the processor but does not
include any socket resistance or board trace resistance between the socket and the
external remote diode thermal sensor. RT can be used by remote diode thermal sensors
with automatic series resistance cancellation to calibrate out this error term. Another
application is that a temperature offset can be manually calculated and programmed into
an offset register in the remote diode thermal sensors as exemplified by the equation:
Terror = [RT * (N-1) * IFWmin] / [nk/q * ln N]
where Terror = sensor temperature error, N = sensor current ratio, k = Boltzmann
Constant, q = electronic charge.
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Datasheet