AC82GL40-SLB95 Datasheet, PDF (31/98 Pages) Intel Corporation – Intel® Celeron® Mobile Processor Dual-Core on 45-nm Process

Electrical Specifications
Table 10.
AGTL+ Signal Group DC Specifications
Symbol
Parameter
Min
V_CCP
GTLREF
R_COMP
R_ODT
V_IH
V_IL
V_OH
R_TT
R_ON
I_LI
Cpad
I/O Voltage
Reference Voltage
Compensation Resistor
1.00
27.23
Termination Resistor
Input High Voltage
GTLREF+0.10
Input Low Voltage
-0.10
Output High Voltage
V_CCP-0.10
Termination Resistance
50
Buffer On Resistance
22
Input Leakage Current
Pad Capacitance
1.6
Typ
1.05
2/3 V_CCP
27.5
55
V_CCP
0
V_CCP
55
25
2.1
Max
Unit Notes¹
1.10
27.78
V
V
6
Ω
10
Ω
11
V_CCP+0.10
V
3,6
GTLREF-0.10 V
2,4
V_CCP
61
6
Ω
7
28
±100
2.55
Ω
5
µA
8
pF
9
NOTES:
1.
Unless otherwise noted, all specifications in this table apply to all processor frequencies.
2.
V_IL is defined as the maximum voltage level at a receiving agent that is interpreted as a
logical low value.
3.
V_IH is defined as the minimum voltage level at a receiving agent that is interpreted as a
logical high value.
4.
V_IH and V_OH may experience excursions above V_CCP. However, input signal drivers must
comply with the signal quality specifications.
5.
This is the pull-down driver resistance. Measured at 0.31*V_CCP. R_ON (min) = 0.4*R_TT, R_ON
(typ) = 0.455*R_TT, R_ON (max) = 0.51*R_TT. R_TT typical value of 55 Ω is used for R_ON typ/
min/max calculations.
6.
GTLREF should be generated from V_CCP with a 1%-tolerance resistor divider. The V_CCP
referred to in these specifications is the instantaneous V_CCP.
7.
R_TT is the on-die termination resistance measured at V_OL of the AGTL+ output driver.
Measured at 0.31*V_CCP. R_TT is connected to V_CCP on die.
8.
Specified with on die R_TT and R_ON turned off. Vin between 0 and V_CCP.
9.
Cpad includes die capacitance only. No package parasitics are included.
10. This is the external resistor on the comp pins.
11. On die termination resistance measured at 0.33*V_CCP.
Datasheet
31