AC82GL40-SLB95 Datasheet, PDF (32/98 Pages) Intel Corporation – Intel® Celeron® Mobile Processor Dual-Core on 45-nm Process

Electrical Specifications
Table 11.
Table 12.
CMOS Signal Group DC Specifications
Symbol
Parameter
Min
V_CCP
V_IH
V_IL
V_OH
V_OL
I_OH
I_OL
I_LI
Cpad1
Cpad2
I/O Voltage
Input High Voltage
Input Low Voltage
CMOS
Output High Voltage
Output Low Voltage
Output High Current
Output Low Current
Input Leakage Current
Pad Capacitance
Pad Capacitance for
CMOS Input
1.00
0.7*V_CCP
-0.10
0.9*V_CCP
-0.10
1.5
1.5
1.6
0.95
Typ
1.05
V_CCP
0.00
V_CCP
0
2.1
1.2
Max
1.10
V_CCP+0.1
0.3*V_CCP
V_CCP+0.1
0.1*V_CCP
4.1
4.1
±100
2.55
1.45
Unit Notes¹
V
V
2
V
2
V
2
V
2
mA
5
mA
4
µA
6
pF
7
3
NOTES:
1.
Unless otherwise noted, all specifications in this table apply to all processor frequencies.
2.
The V_CCP referred to in these specifications refers to instantaneous V_CCP.
3.
Cpad2 includes die capacitance for all other CMOS input signals. No package parasitics are
included.
4.
Measured at 0.1*V_CCP.
5.
Measured at 0.9*V_CCP.
6.
For Vin between 0 V and V_CCP. Measured when the driver is tristated.
7.
Cpad1 includes die capacitance only for DPRSTP#, DPSLP#, PWRGOOD. No package
parasitics are included.
Open Drain Signal Group DC Specifications
Symbol
Parameter
Min
Typ
V_OH
V_OL
I_OL
I_LO
Cpad
Output High Voltage
Output Low Voltage
Output Low Current
Output Leakage Current
Pad Capacitance
V_CCP-5%
0
16
1.9
V_CCP
2.2
Max
V_CCP+5%
0.20
50
±200
2.45
Unit Notes¹
V
3
V
mA
2
µA
4
pF
5
NOTES:
1.
Unless otherwise noted, all specifications in this table apply to all processor frequencies.
2.
Measured at 0.2 V.
3.
V_OH is determined by value of the external pull-up resistor to V_CCP.
4.
For Vin between 0 V and V_OH.
5.
Cpad includes die capacitance only. No package parasitics are included.
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Datasheet