PXD10 Datasheet, PDF (93/130 Pages) Lumins Inc. – 4” Dia.X 6” extruded aluminum step poles

Electrical characteristics
Table 44. Slow internal RC oscillator (128 kHz) electrical characteristics
Symbol C
Parameter
Conditions¹
Value
Unit
Min Typ Max
f_SIRC CC P Slow internal RC oscillator low
SR — ^frequency
T_A = 25 °C, trimmed
—
— 128 — kHz
100
150
_SIRCVAR CC C Slow internal RC oscillator variation Trimmed
across temperature (T_A = -40°C to
105°C) and supply with respect to f_SIRC
at T_A = 25 °C in high frequency
configuration
-10%
+10% kHz
I_SIRC CC D Slow internal RC oscillator low
frequency current
T_A = 25 °C, trimmed
— — 5 µA
t_SIRCSU CC C Slow internal RC oscillator start-up time T_A = 25 °C, V_DD = 5.0 V ± 10% — 8 12 µs
NOTES:
1 _{VDD = 3.3 V ± 10% / 5.0 V ± 10%, TA = 40 to 105 °C, unless otherwise specified.}
3.16 Flash memory electrical characteristics
Table 45. Program and erase specifications
Value
Symbol
C
Parameter
Typ¹
Initial
max²
Unit
Max³
T_dwprogram CC C Double word (64 bits) program time⁴
22
50
500 µs
T_16kpperase CC C 16 KB block pre-program and erase time
300
500
5000 ms
T_32kpperase CC C 32 KB block pre-program and erase time
400
600
5000 ms
T_128kpperase CC C 128 KB block pre-program and erase time
800
1300 7500 ms
T_eslat
CC D Erase suspend latency
—
30
30
µs
NOTES:
1 _{Typical program and erase times assume nominal supply values and operation at 25 °C.}
2 _{Initial factory condition: < 100 program/erase cycles, 25 °C, typical supply voltage.}
3 _{The maximum program and erase times occur after the specified number of program/erase cycles. These maximum}
values are characterized but not guaranteed.
4 _{Actual hardware programming times. This does not include software overhead.}
PXD10 Microcontroller Data Sheet, Rev. 1
Freescale Semiconductor
93