PXD10 Datasheet, PDF (81/130 Pages) Lumins Inc. – 4” Dia.X 6” extruded aluminum step poles

Electrical characteristics
Table 33. SMD pad electrical characteristics
Symbol C
Parameter
Conditions
Min
V_IL
V_IH
V_HYST
V_OL
V_OH
I_PU
I_PD
CC P Low level input voltage
—
CC P High level input voltage
—
CC C Schmitt trigger hysteresis
—
CC P Low level output voltage
CC P High level output voltage
I_OL = 20 mA¹
I_OL = 30 mA²
I_OH = –20 mA¹
I_OH = –30 mA²
CC P Internal pull-up device current V_in=V_IL
V_in=V_IH
CC P Internal pull-down device
current
V_in=V_IL
–0.4
0.65V_DDM
0.1V_DDM
—
—
V_DDM–0.32
V_DDM–0.48
–130
—
10
V_in=V_IH
—
I_IN CC P Input leakage current
—
-1
R_DSONH CC C SMD pad driver active high IOH  –30 mA²
—
impedance
R_DSONL CC C SMD pad driver active low
IOL  30 mA²
—
impedance
V_OMATCH CC P Output driver matching
V_OH / V_OL
I_OH / I_OL  30 mA²
—
NOTES:
1 _{VDD = 5.0 V ±10%, Tj = -40 to 150 °C.}
2 _{VDD = 5.0 V ±10%, Tj = -40 to 130 °C.}
Value
Typ
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Unit
Max
0.35V_DDM V
V_DDM+0.4
—
0.32
0.48
—
—
—
A
–10
—
130
1
16

16

90
mV
3.8.4 I/O pad current specification
The I/O pads are distributed across the I/O supply segment. Each I/O supply segment is associated to a
V_DD/V_SS supply pair as described in Table 34.
Table 35 provides I/O consumption figures.
In order to ensure device reliability, the average current of the I/O on a single segment should remain below
the I_AVGSEG maximum value.
In order to ensure device functionality, the sum of the dynamic and static current of the I/O on a single
segment should remain below the I_DYNSEG maximum value.
PXD10 Microcontroller Data Sheet, Rev. 1
Freescale Semiconductor
81