MC9S08EL32 Datasheet, PDF (49/356 Pages) Freescale Semiconductor, Inc – 8-Bit HCS08 Central Processor Unit (CPU)

PROGRAM AND
ERASE FLOW
WRITE TO FCDIV⁽¹⁾
START
0
FACCERR ?
(1) _{Required only once}
after reset.
CLEAR ERROR
Chapter 4 Memory
WRITE TO FLASH OR EEPROM
TO BUFFER ADDRESS AND DATA
WRITE COMMAND TO FCMD
WRITE 1 TO FCBEF
TO LAUNCH COMMAND
AND CLEAR FCBEF ⁽²⁾
(2) _{Wait at least four bus cycles}
before checking FCBEF or FCCF.
FPVIOL OR
FACCERR ?
NO
0
FCCF ?
1
DONE
YES
ERROR EXIT
Figure 4-2. Program and Erase Flowchart
4.5.4 Burst Program Execution
The burst program command is used to program sequential bytes of data in less time than would be
required using the standard program command. This is possible because the high voltage to the FLASH
array does not need to be disabled between program operations. Ordinarily, when a program or erase
command is issued, an internal charge pump associated with the FLASH memory must be enabled to
supply high voltage to the array. Upon completion of the command, the charge pump is turned off. When
a burst program command is issued, the charge pump is enabled and then remains enabled after completion
of the burst program operation if these two conditions are met:
• The next burst program command has been queued before the current program operation has
completed.
• The next sequential address selects a byte on the same burst block as the current byte being
programmed. A burst block in this FLASH memory consists of 64 bytes. A new burst block begins
at each 64-byte address boundary.
MC9S08EL32 Series and MC9S08SL16 Series Data Sheet, Rev. 3
Freescale Semiconductor
49