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MC68HC908GR16 Datasheet, PDF (267/276 Pages) Motorola, Inc – Microcontrollers
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20.15 Memory Characteristics
Memory Characteristics
Characteristic
Symbol
Min
Typ
Max
Unit
RAM data retention voltage
FLASH program bus clock frequency
VRDR
—
1.3
—
1
—
—
V
—
MHz
FLASH read bus clock frequency
FLASH page erase time
Limited endurance (<1 K cycles)
Maximum endurance (>1 K cycles)
fRead(1)
0
—
8M
Hz
tErase(2)
0.9
1
1.1
ms
3.6
4
5.5
FLASH mass erase time
FLASH PGM/ERASE to HVEN setup time
FLASH high-voltage hold time
FLASH high-voltage hold time (mass erase)
tMErase(3)
4
—
tNVS
10
—
tNVH
5
—
tNVHL
100
—
—
ms
—
μs
—
μs
—
μs
FLASH program hold time
FLASH program time
FLASH return to read time
FLASH cumulative program HV period
FLASH endurance(6)
tPGS
tPROG
tRCV(4)
tHV(5)
—
5
30
1
—
10 k
—
—
—
—
100 k
—
μs
40
μs
—
μs
4
ms
—
Cycles
FLASH data retention time(7)
—
15
100
—
Years
1. fRead is defined as the frequency range for which the FLASH memory can be read.
2. If the page erase time is longer than tErase (min), there is no erase disturb, but it reduces the endurance of the FLASH
memory.
3. If the mass erase time is longer than tMErase (min), there is no erase disturb, but it reduces the endurance of the FLASH
memory.
4. tRCV is defined as the time it needs before the FLASH can be read after turning off the high voltage charge pump, by clearing
HVEN to 0.
5. tHV is defined as the cumulative high voltage programming time to the same row before next erase.
tHV must satisfy this condition: tNVS + tNVH + tPGS + (tPROG x 32) ≤ tHV maximum.
6. Typical endurance was evaluated for this product family. For additional information on how Freescale defines Typical
Endurance, please refer to Engineering Bulletin EB619.
7. Typical data retention values are based on intrinsic capability of the technology measured at high temperature and de-rated
to 25°C using the Arrhenius equation. For additional information on how Freescale defines Typical Data Retention, please
refer to Engineering Bulletin EB618.
MC68HC908GR16 Data Sheet, Rev. 5.0
Freescale Semiconductor
267
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