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MC9S12XD64MAA Datasheet, PDF (1259/1348 Pages) Freescale Semiconductor, Inc – ATD Input Enable Register 0 | |||
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Appendix A Electrical Characteristics
Table A-17. NVM Timing Characteristics
Conditions are shown in Table A-4 unless otherwise noted
Num C
Rating
Symbol
Min
Typ
Max
Unit
1 D External oscillator clock
fNVMOSC
0.5
â
801
MHz
2 D Bus frequency for programming or erase operations
fNVMBUS
1
â
â
MHz
3 D Operating frequency
fNVMOP
150
â
200
kHz
4 P Single word programming time
tswpgm
462
â
74.53
µs
5 D Flash burst programming consecutive word 4
tbwpgm
20.42
â
313
µs
6 D Flash burst programming time for 64 words4
tbrpgm
1331.22
â
2027.53
µs
7 P Sector erase time
tera
205
â
26.73
ms
8 P Mass erase time
tmass
1005
â
1333
ms
9 D Blank check time Flash per block
tcheck
116
â
655467
tcyc
10 D Blank check time EEPROM per block
tcheck
116
â
20587
tcyc
1 Restrictions for oscillator in crystal mode apply.
2 Minimum programming times are achieved under maximum NVM operating frequency fNVMOP and maximum bus frequency
fbus.
3 Maximum erase and programming times are achieved under particular combinations of fNVMOP and bus frequency fbus. Refer
to formulae in Sections Section A.3.1.1, âSingle Word Programmingâ â Section A.3.1.4, âMass Eraseâ for guidance.
4 Burst programming operations are not applicable to EEPROM
5 Minimum erase times are achieved under maximum NVM operating frequency, fNVMOP.
6 Minimum time, if ï¬rst word in the array is not blank
7 Maximum time to complete check on an erased block
Freescale Semiconductor
MC9S12XDP512 Data Sheet, Rev. 2.21
1261
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