M12S64164A Datasheet, PDF (9/45 Pages) Elite Semiconductor Memory Technology Inc. – 1M x 16 Bit x 4 Banks Synchronous DRAM

ESMT
M12S64164A
BURST SEQUENCE (BURST LENGTH = 4)
Initial Address
A1
A0
Sequential
Interleave
0
0
0
1
2
3
0
1
2
3
0
1
1
2
3
0
1
0
3
2
1
0
2
3
0
1
2
3
0
1
1
1
3
0
1
2
3
2
1
0
BURST SEQUENCE (BURST LENGTH = 8)
Initial Address
A2
A1
A0
0
0
0
0
0
1
0
1
0
0
1
1
1
0
0
1
0
1
1
1
0
1
1
1
Sequential
Interleave
0123456701234567
1234567010325476
2345670123016745
3456701232107654
4567012345670123
5670123454761032
6701234567452301
7012345676543210
Elite Semiconductor Memory Technology Inc.
Publication Date: Apr. 2009
Revision: 1.2
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