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M12S64164A Datasheet, PDF (7/45 Pages) Elite Semiconductor Memory Technology Inc. – 1M x 16 Bit x 4 Banks Synchronous DRAM | |||
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ESMT
M12S64164A
SIMPLIFIED TRUTH TABLE
COMMAND
Register
Refresh
Mode Register set
Auto Refresh
Entry
Self
Refresh
Exit
Bank Active & Row Addr.
Read &
Auto Precharge Disable
Column Address Auto Precharge Enable
Write &
Auto Precharge Disable
Column Address Auto Precharge Enable
Burst Stop
Precharge
Bank Selection
All Banks
CKEn-1
CKEn
CS RAS
CAS
WE
DQM
BA0,
BA1
A10/AP
A11,
A9~A0
Note
H
X LL L L X
OP CODE
1,2
H
3
H
LL L H X
X
L
3
L
H
LH H H X
X
3
HX X X X
3
H
X LL H H X V
Row Address
L
Column 4
H
X LH L H X V
Address
H
(A0~A7) 4,5
L
Column 4
H
X LH L L X V
Address
H
(A0~A7) 4,5
H
X LH H L X
X
6
V
L
H
X LL H L X
X
X
H
HX X X
Clock Suspend or
Entry
H
L
X
LV V V
X
Active Power Down
Exit
L
H XX X X X
HX X X
Entry
H
L
X
LH H H
Precharge Power Down Mode
X
HX X X
Exit
L
H
X
LV V V
DQM
H
X
V
X
7
No Operating Command
HX X X
H
X
X
X
LH H H
Note:
(V = Valid, X = Donât Care. H = Logic High, L = Logic Low)
1.OP Code : Operating Code
A0~A11 & BA0 ~ BA1: Program keys. (@ MRS)
2.MRS can be issued only at all banks precharge state.
A new command can be issued after 2 CLK cycles of MRS.
3.Auto refresh functions are as same as CBR refresh of DRAM.
The automatical precharge without row precharge of command is meant by âAutoâ.
Auto/self refresh can be issued only at all banks idle state.
4. BA0 ~ BA1: Bank select addresses.
If both BA0 and BA1 are âLowâ at read, write, row active and precharge, bank A is selected.
If both BA0 is âLowâ and BA1 is âHighâ at read, write, row active and precharge, bank B is selected.
If both BA0 is âHighâ and BA1 is âLowâ at read, write, row active and precharge, bank C is selected.
If both BA0 and BA1 are âHighâ at read, write, row active and precharge, bank D is selected
If A10/AP is âHighâ at row precharge , BA0 and BA1 is ignored and all banks are selected.
5.During burst read or write with auto precharge, new read/write command can not be issued.
Another bank read/write command can be issued after the end of burst.
New row active of the associated bank can be issued at tRP after the end of burst.
6.Burst stop command is valid at every burst length.
7.DQM sampled at positive going edge of a CLK and masks the data-in at the very CLK (Write DQM latency is 0), but
makes Hi-Z state the data-out of 2 CLK cycles after.(Read DQM latency is 2)
Elite Semiconductor Memory Technology Inc.
Publication Date: Apr. 2009
Revision: 1.2
7/45
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