M12S64164A Datasheet, PDF (27/45 Pages) Elite Semiconductor Memory Technology Inc. – 1M x 16 Bit x 4 Banks Synchronous DRAM

ESMT
M12S64164A
Single Bit Read-Write-Read Cycle (Same Page) @ CAS Latency = 3, Burst Length = 1
CLOCK
CKE
CS
RAS
CAS
ADDR
BA0, BA1
tCH
0
1
2
3
4
5
6
tCC
*Note1
tCL
tRAS
tRC
tSH
tRCD
7
8
9
10 11 12 13
14 15 16 17
18 19
HIGH
tSH
tSS
tRP
tSS
tSH
Ra
tSS
*Note2
BS
tSH
tSS
Ca
*Note2,3
BS
tCCD
Cb
*Note2,3
BS
Cc
*Note2,3 *Note4
BS BS
Rb
*Note2
BS
A10/AP
Ra
DQ
WE
DQM
*Note 3
tSAC
tSLZ
*Note 3
*Note 3 *Note4
Qa
tOH
tSH
Db
tSH
tSS
tSS
tSS
tSH
Rb
Qc
Row Active
Read
W rite
Read
Precharge
Row Active
:Don't Care
Elite Semiconductor Memory Technology Inc.
Publication Date: Apr. 2009
Revision: 1.2
27/45