MA31750 Datasheet, PDF (32/42 Pages) Dynex Semiconductor – High Performance MIL-STD-1750 Microprocessor

MA31750
9. RATING AND CHARACTERISTICS
Parameter
Supply voltage
Input voltage
Current through any I/O pin
Operating temperature
Storage temperature
Min.
-0.5
-0.3
-20
-55
-65
Max.
7
VDD+0.3
20
125
150
Figure 34: Absolute Maximum Ratings
Units
V
V
mA
oC
oC
Note: Stresses above those listed may cause permanent
damage to the device. This is a stress rating only and
functional operation of the device at these conditions, or at any
other condition above those indicated in the operations section
of this specification, is not implied. Exposure to absolute
maximum ratings for extended periods may affect device
reliability.
P a ra me t e r
Min.
Clock Frequency (CLK)
0
TCLK Frequency
0
Recommended Clock duty cycle
45
† MIL-STD-1750 mandates that TCLK be 100kHz
Vdd=5V±10% over full operating temperature range
Mil-Std-883, method 5005, subgroups 7, 8A, 8B
Max
16
fCLK / 9 †
55
Figure 35: Operating AC Electrical Characteristics
Units
MHz
Hz
%
S y mbol P a ra me t e rs
Conditions
V_DD
V_IH
V_IL
V_CKH
V_CKL
V_OH
V_OL
I_IH
I_IL
I_OZH
I_OZL
I_DDYN
I_DDS
Supply voltage
Input high voltage
Input low voltage
CLK & TCLK input high voltage
CLK & TCLK input low voltage
Output high voltage
Output low voltage
Input high current (Note 1)
Input low current (Note 1)
I/O tristate high current (Note 1)
I/O tristate low current (Note 1)
Dynamic supply current @ 16MHz
Static supply current
-
-
-
-
-
I_OH=-3mA
I_OL=5mA
-
-
-
-
-
-
Vdd=5V±10% over full operating temperature range
Mil-Std-883, method 5005, subgroups 1, 2, 3
Note 1: Guaranteed but not tested at low temperature (-55°C)
Total dose radiation not
exceeding 3x10⁵ Rad(Si)
Min
Typ
Max
4.5
5.0
5.5
80% VDD
-
-
-
-
20% VDD
V_DD-0.5
-
-
-
-
V_SS+0.5
V_DD-0.5
-
-
-
-
V_SS+0.4
-
-
10
-
-
-10
-
-
50
-
-
-50
-
-
80
-
-
10
Figure 36: Operating DC Electrical Characteristics
Units
V
V
V
V
V
V
V
µA
µA
µA
µA
mA
mA
32/42