IBIS4-A-6600 Datasheet, PDF (7/40 Pages) Cypress Semiconductor – 6.6 MP CMOS Image Sensor

ADVANCE
INFORMATION
IBIS4-A-6600
CYII4SM6600AB
Electro-voltaic Response Curve
0.7
Figure 2. Electro-voltaic Response Curve
0.6
0.5
0.4
0.3
0.2
0.1
0
0
5000
10000
15000
20000
25000
# electrons
Electro-voltaic Response Curve on page 7 shows the pixel
response curve in linear response mode. This curve is the
relation between the electrons detected in the pixel and the
output signal. The resulting voltage-electron curve is
independent of any parameters (integration time, etc). The
voltage to electrons conversion gain is 43 µV/electron.
Features and General Specifications
Table 4. Features and General Specifications
Feature
Electronic shutter type
Integration time control
Windowing (ROI)
Sub-sampling modes:
Extended dynamic range
Analog output
Digital output
Supply voltage VDD
Logic levels
Interface
Package
Specification/Description
Rolling shutter.
60 µs - 1/frame period.
Randomly programmable ROI read out.
Several sub sample modes can be programmed (see 2.6).
Dual slope (up to 90 dB optical dynamic range) and non-destructive read out
mode.
The output rate of 40 Mpixels/s can be achieved with 2 analog outputs each
working at 20 Mpixel/s.
2 on-chip 10-bit ADCs @ 20 Msamples/s are multiplexed to 1 digital 10 bit
output @ 40 Msamples/s.
Nominal 2.5V (some supplies require 3.3V for extended dynamic range).
2.5V.
Serial-to Parallel Interface (SPI).
68-pins LCC.
Document Number: 001-02366 Rev. *D
Page 7 of 40
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