IBIS4-A-6600 Datasheet, PDF (5/40 Pages) Cypress Semiconductor – 6.6 MP CMOS Image Sensor

ADVANCE
INFORMATION
IBIS4-A-6600
CYII4SM6600AB
Specifications
General Specifications
Table 2. General Specifications.
Parameter
Pixel architecture
Pixel size
Resolution
Pixel rate
Shutter type
Full frame rate
Specification
3T-pixel
3.5 m x 3.5 m
2210 x3002
40 MHz
Electronic rolling shutter
5 frames/second
Electro-optical specifications
Overview
Table 3. Electro-optical Specifications
Parameter
FPN (local)
PRNU (local)
Conversion gain
Output signal amplitude
Saturation charge
Sensitivity (peak)
Sensitivity (visible)
Peak QE * FF
Peak Spectral Resp.
Specification
<0.20%
<1.5%
Conversion gain
0.6V
21.500 e-
411V.m2/W.s
4.83 V/lux.s
328 V.m2/W.s
2.01 V/lux.s
25%
0.13 A/W
Fill factor
Dark current
Dark Signal Non Uniformity
Temporal noise
S/N Ratio
Spectral sensitivity range
Optical cross talk
Power dissipation
35%
3.37 mV/s
78 e-/s
8.28 mV/s
191 e-/s
24 RMS e-
895:1 (59 dB)
400 - 1000 nm
15%
4%
190 mWatt
Remarks
The resolution and pixel size results in a 7.74 mm x 10.51 mm
optical active area.
Using a 40- MHz system clock and 1 or 2 parallel outputs.
Increases with ROI read out and/or sub sampling.
Remarks
RMS% of saturation signal.
RMS of signal level.
@ output (measured).
At nominal conditions.
@ 650 nm
(85 lux = 1 W/m2).
400-700 nm
(163 lux = 1 W/m2).
Average QE*FF = 22% (visible range).
Average SR*FF = 0.1 A/W (visible range).
See spectral response curve.
Light sensitive part of pixel (measured).
Typical value of average dark current of the whole pixel array
(@ 21 °C).
Dark current RMS value (@ 21 °C).
Measured at digital output (in the dark).
Measured at digital output (in the dark).
To the first neighboring pixel.
To the second neighboring pixel.
Typical (including ADCs).
Document Number: 001-02366 Rev. *D
Page 5 of 40
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