W958D6DB Datasheet, PDF (53/57 Pages) Winbond – Low-power features

W958D6DB
10.2.18 Burst READ Followed by Asynchronous WRITE
256Mb Async./Burst/Sync./A/D MUX
V IH
CLK _VIL
A[max: 16 ] ^{V IH}
V IL
V IH
ADV # _VIL
V IH
CE # _VIL
V IH
OE # _VIL
WE # ^{V IH}
V IL
V IH
LB#/ UB# _VIL
A/DQ [15:0]V ^IH
V IL
VOH
WAIT _VOL
tCLK
tSP tHD
Vaild address
tSP tHD
tCSP
Valid address
tAVS tAVH
t AS
tVP
tHD
tCBPH
t HZ
t AS
t CW
Note 2
t BOE
tOHZ
tSP tHD _tOLZ
tWP
tSP
tHD
tBW
tAW
tVS
tWPH
tSP tHD
Valid address
High-Z
tACLK ^tKOH
VOH
Valid output
VOL
tKOH
tKHTL
READ Burst Identified
( WE # = HIGH )
tKHTL
t AS
tAVS tAVH _{tDW tDH}
VIH
VI L
Valid address
Valid Input
High - Z
Don' t Care
Undefined
Notes: 1.Non-default BCR settings for burst READ followed by asynchronous WRITE using ADV#: fixed or variable latency, latency
code 2 (3 clocks), WAIT active LOW, WAIT asserted during delay.
2.When the device is transitioning between asynchronous and variable-latency burst operations, CE# must go HIGH. CE#
can stay LOW when the device is transitioning from fixed-latency burst READs; asynchronous operation begins at the
falling edge of ADV#. A refresh opportunity must be provided every tCEM. A refresh opportunity is satisfied by either of the
following two conditions: a) clocked CE# HIGH, or b) CE# HIGH for longer than 15ns.
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Publication Release Date : June 27 ,2013
Revision : A01-003