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W958D6DB Datasheet, PDF (52/57 Pages) Winbond – Low-power features
W958D6DB
10.2.17 Asynchronous WRITE Followed by Burst READ
256Mb Async./Burst/Sync./A/D MUX
VIH
CLK VIL
A[ max: 16 ]
VIH
VIL
Valid address
t AVS
t AS
t AVH
ADV#
VIH
VIL
tVP
tAS
tBW
LB #/ UB #
VIH
VIL
tCW
CE #
VIH
VIL
tCLK
tSP tHD
Valid address
tSP tHD
tSP
tCBPH tCSP
Note 2
t HD
tOHZ
OE #
VIH
VIL
tWC
tWP
tSP tHD
WE #
VIH
VIL
A/DQ[15:0]
VIH
VIL
WAIT
VOH
VOL
t AS
Valid address Data
tAVS
tDW tDH
tAVH
tSP tHD
tBOE
Valid VOH
address VOL
Valid Valid Valid Valid
output output output output
tKHTL tACLK tKOH
High-Z
Don't Care Undefined
Notes: 1.Non-default BCR settings for asynchronous WRITE, with ADV# LOW, followed by burst READ: fixed or variable latency,
latency code 2 (3 clocks), WAIT active LOW, WAIT asserted during delay.
2.When the device is transitioning between asynchronous and variable-latency burst operations, CE# must go HIGH. CE#
can stay LOW when the device is transitioning to fixed-latency burst READs. A refresh opportunity must be provided every
tCEM. A refresh opportunity is satisfied by either of the following two conditions: a) clocked CE# HIGH, or b) CE# HIGH for
longer than 15ns.
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Publication Release Date : June 27 ,2013
Revision : A01-003