W958D6DB Datasheet, PDF (33/57 Pages) Winbond – Low-power features

W958D6DB
9.3 Deep Power-Down Specifications
256Mb Async./Burst/Sync./A/D MUX
DESCRIPTION
CONDITIONS
SYMBOL
Deep Power-
Down
VIN = VCCQ or 0V;
VCC, VCCQ = 1.95V; +85°C
IZZ
Note: Typical (TYP) IZZ value applies across all operating temperatures and voltages.
TYPICAL
10
UNIT
μA
9.3 Partial Array Self Refresh Standby Current
Description Conditions
Symbol
Partial-array
refresh
Standby current
VIN = VCCQ
or 0V, CE# =
VCCQ
IPAR
Standard
power
(no
designation)
Array
Partition
Full
1/2
1/4
1/8
0
Max
400
330
300
280
250
Unit
uA
9.4 Capacitance
Description
Conditions
Symbol Min
Input Capacitance
Input/Output
Capacitance (A/DQ)
TC = +25ºC; f = 1 MHz; VIN =
0V
CIN
CIO
2.0
3.0
Notes: 1. These parameters are verified in device characterization and are not 100% tested.
Max
6
6.5
Unit
pF
pF
Note
1
1
9.5 AC Input-Output Reference Wave form
VccQ
Intput¹
VccQ/2²
Test Points
VccQ/2³ Output
VssQ
Notes:1.AC test inputs are driven at VCCQ for a logic 1 and VSSQ for a logic 0. Input rise and fall times (10% to 90%) <1.6ns.
2.Input timing begins at VCCQ/2.
3.Output timing ends at VCCQ/2.
9.6 AC Output Load Circuit
Test Point
DUT
50 Ohm
30pF
VCCQ/2
Notes: All tests are performed with the outputs configured for default setting of half drive strength (BCR[5:4] = 01b).
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Publication Release Date : June 27 ,2013
Revision : A01-003