W958D6DB Datasheet, PDF (36/57 Pages) Winbond – Low-power features

W958D6DB
256Mb Async./Burst/Sync./A/D MUX
10.1.3 Asynchronous WRITE Cycle Timing Requirements
Parameter
Symbol
Min
Max
Unit Note
Address and ADV# LOW setup time
tAS
0
ns
Address HOLD from ADV# going HIGH
tAVH
2
ns
Address setup to ADV# going HIGH
tAVS
5
ns
Address valid to end of WRITE
tAW
70
ns
LB#/UB# select to end of WRITE
tBW
70
ns
CE# HIGH between subsequent asynchronous operations
tCPH
5
ns
CE# LOW to ADV# HIGH
tCVS
7
ns
Chip enable to end of WRITE
tCW
70
ns
Data HOLD from WRITE time
tDH
0
ns
Data WRITE setup time
tDW
20
ns
Chip disable to WAIT High-Z output
tHZ
7
ns
1
ADV# pulse width
tVP
5
ns
ADV# setup to end of WRITE
tVS
70
ns
WRITE to DQ High-Z output
tWHZ
7
ns
1
WRITE pulse width
tWP
45
ns
2
WRITE recovery time
tWR
0
ns
Notes: 1. Low-Z to High-Z timings are tested with AC Output Load Circuit. The High-Z timings measure a 100mV transition from
either VOH or VOL toward VCCQ/2.
2. WE# LOW time must be limited to tCEM (4μs).
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Publication Release Date : June 27 ,2013
Revision : A01-003