SI5344H-42H Datasheet, PDF (5/56 Pages) Silicon Laboratories – HIGH-FREQUENCY,

Si5344H/42H
Table 2. DC Characteristics
(V_DD = 1.8 V ±5%, V_DDA = 3.3 V ±5%, V_DDO = 1.8 V ±5%, 2.5 V ±5%, or 3.3 V ±5%, T_A = –40 to 85 °C)
Parameter
Core Supply Current
Output Buffer Supply Current
Total Power Dissipation
Symbol
I_DD
I_DDA
I_DDOx
P_d
Test Condition
Min
Si5342H
—
Si5344H
—
High-Frequency Output —
Mode (AC-coupled)
@2.75GHz
LVPECL Output
—
@ 156.25 MHz
LVDS Output
—
@ 156.25 MHz
3.3 V LVCMOS output
—
@ 156.25 MHz
2.5 V LVCMOS output
—
@ 156.25 MHz
1.8 V LVCMOS output
—
@ 156.25 MHz
Si5344H Notes 1, 5 —
Si5342H Notes 2, 5 —
Typ
Max Unit
145
190
mA
120
125
mA
45
51
mA
22
26
mA
15
18
mA
22
30
mA
18
23
mA
12
16
mA
900 1000 mW
800
900
mW
Notes:
1. Si5344H test configuration: 2 x 2.5 V LVDS outputs @ 156.25 MHz, 2 x 2.5 V Differential High-Speed Output Mode
(ac-coupled) @ 2.104658 GHz. Excludes power in termination resistors.
2. Si5342H test configuration: 1 x 2.5 V LVDS output @ 156.25 MHz, 1 x 2.5 V Differential High-Speed Output Mode (ac-
coupled) @ 2.104658 GHz. Excludes power in termination resistors.
3. Differential outputs terminated into an ac-coupled 100  load.
4. LVCMOS outputs measured into a 6 inch 50  PCB trace with 5 pF load. Measurements were made in CMOS3 mode.
Differential Output Test Configuration
LVCMOS Output Test Configuration
IDDO
OUT
OUT
0.1 uF
50
100
IDDO
OUTa
OUTb
6 inch
50
5 pF
50
0.1 uF
5. Detailed power consumption for any configuration can be estimated using ClockBuilder Pro when an evaluation board
(EVB) is not available. All EVBs support detailed current measurements for any configuration.
Rev. 1.0
5