38K2 Datasheet, PDF (99/151 Pages) Renesas Technology Corp – SINGLE-CHIP 8-BIT CMOS MICROCOMPUTER

38K2 Group
FLASH MEMORY MODE
The 38K2 group’s flash memory version has an internal new
DINOR (DIvided bit line NOR) flash memory that can be rewritten
with a single power source when VCC is 4.5 to 5.25 V, and 2 power
sources when VCC is 3.0 to 4.5 V.
For this flash memory, three flash memory modes are available in
which to read, program, and erase: the parallel I/O and standard
serial I/O modes in which the flash memory can be manipulated
using a programmer and the CPU rewrite mode in which the flash
memory can be manipulated by the Central Processing Unit
(CPU).
Summary
Table 9 lists the summary of the 38K2 group’s flash memory ver-
sion.
This flash memory version has some blocks on the flash memory
as shown in Figure 146 and each block can be erased. The flash
memory is divided into User ROM area and Boot ROM area.
In addition to the ordinary User ROM area to store the MCU op-
eration control program, the flash memory has a Boot ROM area
that is used to store a program to control rewriting in CPU rewrite
and standard serial I/O modes. This Boot ROM area has had a
standard serial I/O mode control program stored in it when
shipped from the factory. However, the user can write a rewrite
control program in this area that suits the user’s application sys-
tem. This Boot ROM area can be rewritten in only parallel I/O
mode.
Table 9 Summary of 38K2 group’s flash memory version
Item
Specifications
Power source voltage (Vcc)
3.00 – 5.25 V (L version) (Program and erase in 4.00 to 5.25 V of Vcc.)
3.00 – 4.00 V (L version) (Program and erase in 3.00 to 5.25 V of Vcc.)
Program/Erase VPP voltage (VPP)
4.50 – 5.25 V
Flash memory mode
3 modes; Flash memory can be manipulated as follows:
•CPU rewrite mode: Manipulated by the Central Processing Unit (CPU).
•Parallel I/O mode: Manipulated using an external programmer (Note 1)
•Standard serial I/O mode: Manipulated using an external programmer (Note 1)
Erase block division User ROM area
1 block (32 Kbytes)
Boot ROM area
1 block (4 Kbytes) (Note 2)
Program method
Byte program
Erase method
Batch erasing
Program/Erase control method
Program/Erase control by software command
Number of commands
6 commands
Number of program/Erase times
100 times
Data retention period
10 years
ROM code protection
Available in parallel I/O mode and standard serial I/O mode
Notes 1: In the parallel I/O mode or the standard serial I/O mode, use the exclusive external equipment flash programmer which supports the 38K2 Group
(flash memory version).
2: The Boot ROM area has had a standard serial I/O mode control program stored in it when shipped from the factory. This Boot ROM area can be re-
written in only parallel I/O mode.
Rev.3.00 Oct 15, 2006 page 99 of 147
REJ03B0193-0300