|
RX113_16 Datasheet, PDF (97/131 Pages) Renesas Technology Corp – 32 MHz, 32-bit RX MCUs, 50 DMIPS, up to 512 Kbytes of flash memory | |||
|
◁ |
RX113 Group
5. Electrical Characteristics
5.4 USB Characteristics
Table 5.36 USB Characteristics (USB0_DP and USB0_DM Pin Characteristics)
Conditions: 3.0 V ⤠VCC = VCC_USB ⤠3.6 V, 3.0 V ⤠AVCC0 ⤠3.6 V, VSS = AVSS0 = VSS_USB = 0 V, Ta = â40 to +105°C
Item
Symbol
Min.
Max.
Unit
Test Conditions
Input
characteristics
Input high level voltage
Input low level voltage
VIH
2.0
VIL
â
Differential input sensitivity
VDI
0.2
Differential common mode
VCM
0.8
range
â
V
0.8
V
â
V | USB0_DP â USB0_DM |
2.5
V
Output
characteristics
Output high level voltage
Output low level voltage
Cross-over voltage
Rise time
FS
LS
VOH
VOL
VCRS
tr
2.8
VCC_USB
V IOH = â200 μA
0.0
0.3
V IOL = 2 mA
1.3
2.0
V
4
20
ns
Figure 5.54
Figure 5.55
75
300
Fall time
FS
tf
LS
4
20
ns
75
300
Rise/fall time ratio
FS
tr/tf
LS
90
111.11
% tr/tf
80
125
Output resistance
ZDRV
28
44
⦠(Adjusting the resistance
of external elements is
not necessary.)
VBUS
characteristics
VBUS input voltage
VBUS (P16) input leakage
current
VIH
VIL
| IVBUSIN |
VCC Ã 0.8
â
â
â
VCC Ã 0.2
10
V
V
μA USB0_VBUS = 5.5 V
Pull-up,
pull-down
Pull-down resistor
Pull-up resistor
Battery Charging
Specification
Ver 1.2
USB0_DP sink current
USB0_DM sink current
DCD source current
Data detection voltage
USB0_DP source current
USB0_DM source current
RPD
RPUI
RPUA
IDP_SINK
IDM_SINK
IDP_SRC
VDAT_REF
VDP_SRC
VDM_SRC
14.25
0.9
1.425
25
25
7
0.25
0.5
0.5
24.80
1.575
3.09
175
175
13
0.4
0.7
0.7
kâ¦
k⦠During idle state
k⦠During reception
μA
μA
μA
V
V Output current = 250 μA
V Output current = 250 μA
USB0_DP, VCRS
USB0_DM
10%
90%
tr
Figure 5.54 USB0_DP and USB0_DM Output Timing
90%
10%
tf
R01DS0216EJ0110 Rev.1.10
Mar 31, 2016
Page 97 of 131
|
▷ |