RX113_16 Datasheet, PDF (120/131 Pages) Renesas Technology Corp – 32 MHz, 32-bit RX MCUs, 50 DMIPS, up to 512 Kbytes of flash memory

RX113 Group
5. Electrical Characteristics
Table 5.62 ROM (Flash Memory for Code Storage) Characteristics (3)
Middle-speed operating mode Conditions: 1.8 V ≤ VCC ≤ 3.6 V, 1.8 V ≤ AVCC0 ≤ 3.6 V, VSS = AVSS0 = VSS_USB = 0 V
Temperature range for the programming/erasure operation: T_a = –40 to +85°C
FCLK = 1 MHz
FCLK = 8 MHz
Item
Symbol
Unit
Min.
Typ. Max.
Min.
Typ.
Max.
Programming time
4-byte
t_P4
—
143
1330
—
96.8
932
μs
Erasure time
1-Kbyte
t_E1K
—
8.3
269
—
5.85
219
ms
256-Kbyte
t_E256K
—
407
928
—
93
Blank check time
4-byte
t_BC4
—
—
78
—
—
520
ms
50
μs
1-Kbyte
t_BC1K
—
—
1.61
—
—
Erase operation forcible stop time
t_SED
—
—
33.6
—
—
0.369
ms
25.6
μs
Start-up area switching setting time
t_SAS
—
13.2
549
—
7.6
445
ms
Access window time
ROM mode transition wait time 1
ROM mode transition wait time 2
t_AWS
—
13.2
549
—
7.6
t_DIS
2
—
—
2
—
t_MS
3
—
—
3
—
445
ms
—
μs
—
μs
Note:
Note:
Note:
Does not include the time until each operation of the flash memory is started after instructions are executed by software.
The lower-limit frequency of FCLK is 1 MHz during programming or erasing of the flash memory. When using FCLK at below
4 MHz, the frequency can be set to 1 MHz, 2 MHz, or 3 MHz. A non-integer frequency such as 1.5 MHz cannot be set.
The frequency accuracy of FCLK should be ±3.5%. Confirm the frequency accuracy of the clock source.
R01DS0216EJ0110 Rev.1.10
Mar 31, 2016
Page 120 of 131