M30218 Datasheet, PDF (5/179 Pages) Mitsubishi Electric Semiconductor – M30218 Group

Description
Mitsubishi microcomputers
M30218 Group
SINGLE-CHIP 16-BIT CMOS MICROCOMPUTER
Performance Outline
Table AA-1 is a performance outline of M30218 group.
Table AA-1. Performance outline of M30218 group
Item
Performance
Number of basic instructions
91 instructions
Shortest instruction execution time
100ns(f(XIN)=10MHz)
Memory
ROM
See figure memory expansion
capacity
RAM
See figure memory expansion
I/O port
P3, P4, P7 to P10
8 bits x 6
Output port P0 to P2, P5, P6
8 bit x 5
Multifunction TA0, TA1, TA2, TA3, TA4
16 bits x 5
timer
TB0, TB1, TB2
16 bits x 3
Serial I/O UART0, UART1
(UART or clock synchronous) x 2
SI/O2
(Clock synchronous) x 1 (with automatic transfer function)
Fluorescent display
56 pins
A-D converter
10 bits x 8 channels
D-A converter
8 bits x 2
DMAC
CRC calculation circuit
2 channels (triggers :15 sources)
1 circuit (polynomial: X¹⁶ + X¹² + X⁵ + 1)
Watchdog timer
15 bits x 1 (with prescaler)
Interrupt
19 internal and 6 external sources, 4 software sources, 7 levels
Clock generating circuit
2 built-in clock generation circuits
(built-in feedback resistor, and external ceramic or quartz oscillator)
Supply voltage
4.0 to 5.5V (f(XIN)=10MHz)
2.7 to 5.5V (f(XIN)=3.5MHz) (Note)
Power consumption
18 mW (VCC=3V, f(XIN)=5MHz)
I/O
I/O withstand voltage
characteristics
VCC-48V (output ports : P0 to P2, P5, P6, I/O ports : P3, P40 to P43)
0 to VCC (I/O ports :P44 to P47, P7 to P10)
Output current
- 18mA (P0 to P3, P40 to P43, P5, P6)
H
:high-breakdown-voltage, P-channel open-drain
- 5mA (P44 to P47, P7 to P10)
Operating ambient temperature
L 5mA (P44 to P47, P7 to P10)
–20 to 85^oC
Device configuration
CMOS silicon gate
Package
100-pin plastic mold QFP
Note: Only mask ROM version.
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