M30218 Datasheet, PDF (154/179 Pages) Mitsubishi Electric Semiconductor – M30218 Group

Description
Mitsubishi microcomputers
M30218 Group
SINGLE-CHIP 16-BIT CMOS MICROCOMPUTER
Flash Memory
The M30218 group (flash memory version) contains the NOR type of flash memory that requires a high-
voltage VPP power supply for program/erase operations, in addition to the VCC power supply for device
operation. For this flash memory, three flash memory modes are available in which to read, program, and
erase: parallel I/O and standard serial I/O modes in which the flash memory can be manipulated using a
programmer and a CPU rewrite mode in which the flash memory can be manipulated by the Central Pro-
cessing Unit (CPU). Each mode is detailed in the pages to follow.
In addition to the ordinary user ROM area to store a microcomputer operation control program, the flash
memory has a boot ROM area that is used to store a program to control rewriting in CPU rewrite and
standard serial I/O modes. This boot ROM area has had a standard serial I/O mode control program stored
in it when shipped from the factory. However, the user can write a rewrite control program in this area that
suits the user’s application system. This boot ROM area can be rewritten in only parallel I/O mode.
Microcomputer mode
0000016
SFR
0040016
YYYYY16
RAM
Parallel I/O mode
SFR
RAM
CPU rewrite mode
Standard serial I/O mode
SFR
RAM
DF00016
DFDFF16
Collective
erasable/
programmable
area
Boot ROM
area
(3.5K bytes)
Boot ROM
area
(3.5K bytes)
XXXXX16
User ROM
area
FFFFF16
Collective
erasable/
programmable
area
User ROM
area
Collective
erasable/
User ROM
programmable area
area
Type No.
M30218FC
XXXXX16
E000016
YYYYY16
033FF16
E000016
Block 3
E800016
Block 2
F000016
Block 1
F800016
FFFFF16
Block 0
Note 1: In CPU rewrite and standard serial I/O modes, the user ROM is the only erasable/programmable area.
Note 2: In parallel I/O mode, the area to be erased/programmed can be selected by the address A17 input.
The user ROM area is selected when this address input is high and the boot ROM area is selected
when this address input is low.
Figure AA-3. Block diagram of flash memory version
153