M30218 Datasheet, PDF (153/179 Pages) Mitsubishi Electric Semiconductor – M30218 Group

Description
Mitsubishi microcomputers
M30218 Group
SINGLE-CHIP 16-BIT CMOS MICROCOMPUTER
Outline Performance
Table AA-1 shows the outline performance of the M30218 group (flash memory version).
Table AA-1. Outline Performance of the M30218 group (flash memory version)
Item
Performance
Power supply voltage
4.0V to 5.5 V (f(XIN)=10MHz)
Program/erase voltage
VPP=12V ± 5% (f(XIN)=10MHz)
VCC=5V ± 10% (f(XIN)=10MHz)
Flash memory operation mode
Three modes (parallel I/O, standard serial I/O, CPU
rewrite)
Erase block
division
User ROM area
Boot ROM area
See Figure 1.AA.3.
One division (3.5 K bytes) (Note)
Program method
Erase method
Program/erase control method
Number of commands
Program/erase count
In units of byte
Collective erase / block erase
Program/erase control by software command
6 commands
100 times
ROM code protect
Standard serial I/O mode is supported.
Note: The boot ROM area contains a standard serial I/O mode control program which is stored in it
when shipped from the factory. This area can be erased and programmed in only parallel I/O
mode.
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