E202075_HD404889 Datasheet, PDF (155/202 Pages) Renesas Technology Corp – Low-Voltage AS Microcomputers with On-Chip LCD Circuit

HD404889/HD404899/HD404878/HD404868 Series
3. Two levels of program voltages (VPP) are available for the PROM: 12.5V and 21V. Our product
employs a VPP of 12.5V. If a voltage of 21V is applied, permanent breakdown of the product will
result. The VPP of 12.5V is obtained for the PROM writer by setting it according to the Intel 27258
specifications.
Table 28 Socket Adapters
Package
FP-80A
TFP-80C
FP-64A
DP-64S
Model Name
Please ask Hitachi service section.
Please ask Hitachi service section.
Please ask Hitachi service section.
Please ask Hitachi service section.
Manufacturer
Writing/verification
Programming of the built-in program ROM employs a high speed programming method. With this method,
high speed writing is effected without voltage stress to the device or without damaging the reliability of the
written data.
A basic programming flow chart is shown in figure 96 and a timing chart in figure 97.
For precautions for PROM writing procedure, refer to Section 2, "Characteristics of ZTAT^TM
Microcomputer's Built-in Programmable ROM and precautions for its Applications."
Table 29 Selection of Mode
Mode
CE
OE
V_PP
Writing
“Low”
“High”
V_PP
Verification
“High”
“Low”
V_PP
Prohibition of programming “High”
“High”
V_PP
O₀ to O₄
Data input
Data output
High impedance
Table 30 PROM Writer Program Address
ROM size
8k
12k
16k
Address
$0000~$3FFF
$0000~$5FFF
$0000~$7FFF
153