M16C62N Datasheet, PDF (153/213 Pages) Renesas Technology Corp – SINGLE-CHIP 16-BIT CMOS MICROCOMPUTER

Electrical characteristics
Mitsubishi microcomputers
M16C / 62N Group (80-pin)
SINGLE-CHIP 16-BIT CMOS MICROCOMPUTER
Table 1.20.3. Electrical characteristics (referenced to VCC = 3.0V to 3.6V, VSS = 0V at Topr = – 20^oC to
Symbol
85^oC / – 40^oC to 85^oC (Note 1), f(XIN) = 16MHZ unless oth_Stae_nr_dw_ardise specified)
Parameter
Measuring condition
Min. Typ. Max. ^Unit
P00 to P07, P20 to P27, P30 to P37,
VOH
HIGH output P40 to P43, P50 to P57, P60 to P67,
voltage
P76, P77, P80 to P84, P86, P87,
P90, P92 to P97, P100 to P107
IOH=–1mA, VCC=3.3V
V
2.8
VOH
HIGH output XOUT
voltage
HIGHPOWER
LOWPOWER
IOH=–0.1mA, VCC=3.3V
IOH=–50µA, VCC=3.3V
2.8
2.8
V
HIGH output _XCOUT
voltage
HIGHPOWER
LOWPOWER
With no load applied, VCC=3.3V
With no load applied, VCC=3.3V
2.8
V
1.6
P00 to P07, P20 to P27, P30 to P37,
VOL
LOW output ^{P40 to P43, P50 to P57, P60 to P67,}
IOL=1mA, VCC=3.3V
voltage
P70, P71, P76, P77, P80 to P84, P86,
P87, P90, P92 to P97, P100 to P107
0.5 V
LOW output _XOUT
voltage
VOL
LOW output _XCOUT
voltage
HIGHPOWER
LOWPOWER
HIGHPOWER
LOWPOWER
IOL=0.1mA, VCC=3.3V
IOL=50µA, VCC=3.3V
With no load applied, VCC=3.3V
With no load applied, VCC=3.3V
0.5
V
0.5
0
V
0
VT+-VT-
VT+-VT-
Hysteresis
Hysteresis
TA0IN, TA3IN, TA4IN,
TB0IN, TB2IN to TB5IN, INT0 to INT2,
ADTRG,CTS0,CTS1 CLK0,CLK1,CLK3,
CLK4, TA3OUT, TA4OUT, NMI, KI0 to KI3,
SIN4, RXD0 to RXD2
VCC=3.3V
RESET
VCC=3.3V
0.2
0.8 V
0.2
1.8 V
HIGH input P00 to P07, P20 to P27, P30 to P37,
current
P40 to P43, P50 to P57, P60 to P67,
IIH
P70, P71, P76, P77, P80 to P87,
VI=3V, VCC=3.3V
P90, P92 to P97, P100 to P107,
XIN, RESET, CNVss (BYTE)
4.0 µA
LOW input P00 to P07, P20 to P27, P30 to P37,
current
P40 to P43, P50 to P57, P60 to P67,
I IL
P70, P71, P76, P77, P80 to P87,
VI=0V, VCC=3.3V
P90, P92 to P97, P100 to P107,
XIN, RESET, CNVss (BYTE)
–4.0 µA
Pull-up
RPULLUP _resistance
P00 to P07, P20 to P27, P30 to P37,
P40 to P43, P50 to P57, P60 to P67,
P76, P77, P80 to P84, P86,P87,
P90, P92 to P97, P100 to P107
VI=0V, VCC=3.3V
RfXIN Feedback resistance XIN
RfCXIN _{Feedback resistance} XCIN
VRAM RAM retention voltage
When clock is stopped
The output pins Mask ROM
are open and version
other pins are
VSS
Flash memory
version
f(XIN)=16MHz
Square wave, no division
f(XIN)=16MHz
Square wave, no division
Mask ROM
version
f(XCIN)=32kHz, VCC=3.3V
Square wave
20.0 100.0 500.0 kΩ
3.0
MΩ
10.0
MΩ
2.0
V
12.5 25.0 mA
20.0 32.0 mA
40.0
µA
Flash memory
version
f(XCIN)=32kHz, VCC=3.3V
Square wave, in RAM (Note 3)
45
µA
Flash memory
version
f(XCIN)=32kHz, VCC=3.3V
Square wave, in flash memory
225
µA
Flash memory f(XIN)=16MHz , VCC=3.3V
version, program Division by 2
19.0
mA
Icc
Power supply current
Flash memory
version, erase
Mask ROM
version
f(XIN)=16MHz , VCC=3.3V
Division by 2
f(XCIN)=32kHz, VCC=3.3V
When a WAITinstruction
is executed.
Oscillation capacity High (Note2)
f(XCIN)=32kHz, VCC=3.3V
When a WAIT instruction
is executed.
Oscillation capacity Low (Note2)
Flash memory
version
f(XCIN)=32kHz, VCC=3.3V
When a WAITinstruction
is executed.
Oscillation capacity High (Note2)
f(XCIN)=32kHz, VCC=3.3V
When a WAIT instruction
is executed.
Oscillation capacity Low (Note2)
Mask ROM
version
Topr=25°C, VCC=3.3V
when clock is stopped
Flash memory
version
Topr=85°C, VCC=3.3V
when clock is stopped
Note 1: Specify a product of -40°C to 85°C to use it.
Note 2: With one timer operated using fC32.
Note 3: Refer to the shifting to the low power dissipation mode flowchart (Figure 1.29.2b).
21.0
mA
5.8
µA
2.7
µA
7.0
µA
3.0
µA
0.1 2.0
µA
0.4 100
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