N25Q512A13GF840E Datasheet, PDF (84/91 Pages) Micron Technology – Micron Serial NOR Flash Memory 3V, Multiple I/O, 4KB Sector Erase N25Q512A

512Mb, Multiple I/O Serial Flash Memory
AC Characteristics and Operating Conditions
Table 41: AC Characteristics and Operating Conditions (Continued)
Parameter
WRITE VOLATILE CONFIGURATION REGISTER cycle
time
WRITE VOLATILE ENHANCED CONFIGURATION
REGISTER cycle time
WRITE EXTENDED ADDRESS REGISTER cycle time
PAGE PROGRAM cycle time (256 bytes)
Symbol
t_WVCR
t_WRVECR
t_WREAR
t_PP
Min
–
–
–
–
Typ¹
40
40
40
0.5
Max
–
–
–
5
Unit
ns
ns
ns
ms
Notes
7
PAGE PROGRAM cycle time (n bytes)
–
int(n/8) ×
5
ms
7
0.015⁸
PAGE PROGRAM cycle time, V_PP = V_PPH ( 256 bytes)
PROGRAM OTP cycle time (64 bytes)
Subsector ERASE cycle time
t_SSE
Sector ERASE cycle time
t_SE
–
0.4
5
ms
7
–
0.2
–
ms
7
–
0.25
0.8
s
–
0.7
3
s
Sector ERASE cycle time (with V_PP = V_PPH)
DIE ERASE/BULK ERASE cycle time
t_BE
DIE ERASE/BULK ERASE cycle time (with V_PP = V_PPH)
–
0.6
3
s
–
240
480
s
9
–
200
480
s
9
Notes:
1. Typical values given for T_A = 25 °C.
2. ^tCH + ^tCL must add up to 1/^fC.
3. Value guaranteed by characterization; not 100% tested.
4. Expressed as a slew-rate.
5. Only applicable as a constraint for a WRITE STATUS REGISTER command when STATUS
REGISTER WRITE is set to 1.
6. V_PPH should be kept at a valid level until the PROGRAM or ERASE operation has comple-
ted and its result (success or failure) is known.
7. When using the PAGE PROGRAM command to program consecutive bytes, optimized
timings are obtained with one sequence including all the bytes versus several sequences
of only a few bytes (1 < n < 256).
8. int(A) corresponds to the upper integer part of A. For example int(12/8) = 2, int(32/8) = 4
int(15.3) =16.
9. BULK ERASE command only available for part numbers N25Q512A83GSF40x and
N25Q512A83G1240x.
PDF: 09005aef84752721
n25q_512mb_1ce_3V_65nm.pdf - Rev. O 05/13 EN
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