N25Q512A13GF840E Datasheet, PDF (75/91 Pages) Micron Technology – Micron Serial NOR Flash Memory 3V, Multiple I/O, 4KB Sector Erase N25Q512A

512Mb, Multiple I/O Serial Flash Memory
Power-Up and Power-Down
Table 33: Power-Up Timing and V_WI Threshold
Note 1 applies to entire table
Symbol
t_VTR
t_VTW
V_WI
t_VTP
Parameter
V_CC,min to read
V_CC,min to device fully accessible
Write inhibit voltage
V_CC,min to polling allowed
Note: 1. Parameters listed are characterized only.
Min
–
–
1.5
–
Max
150
150
2.5
100
Unit
µs
µs
V
µs
Power Loss Recovery Sequence
If a power loss occurs during a WRITE NONVOLATILE CONFIGURATION REGISTER
command, after the next power-on, the device might begin in an undetermined state
(XIP mode or an unnecessary protocol). If this occurs, until the next power-up, a recov-
ery sequence must reset the device to a fixed state (extended SPI protocol without XIP).
After the recovery sequence, the issue should be resolved definitively by running the
WRITE NONVOLATILE CONFIGURATION REGISTER command again. The recovery se-
quence is composed of two parts that must be run in the correct order. During the en-
tire sequence, ^tSHSL2 must be at least 50ns. The first part of the sequence is DQ0 (PAD
DATA) and DQ3 (PAD HOLD) equal to 1 for the situations listed below:
• 7 clock cycles within S# LOW (S# becomes HIGH before 8th clock cycle)
• + 9 clock cycles within S# LOW (S# becomes HIGH before 10th clock cycle)
• + 13 clock cycles within S# LOW (S# becomes HIGH before 14th clock cycle)
• + 17 clock cycles within S# LOW (S# becomes HIGH before 18th clock cycle)
• + 25 clock cycles within S# LOW (S# becomes HIGH before 26th clock cycle)
• + 33 clock cycles within S# LOW (S# becomes HIGH before 34th clock cycle)
The second part of the sequence is exiting from dual or quad SPI protocol by using the
following FFh sequence: DQ0 and DQ3 equal to 1 for 8 clock cycles within S# LOW; S#
becomes HIGH before 9th clock cycle.
After this two-part sequence the extended SPI protocol is active.
PDF: 09005aef84752721
n25q_512mb_1ce_3V_65nm.pdf - Rev. O 05/13 EN
75
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