N25Q512A13GF840E Datasheet, PDF(65/91 Page) Micron Technology – Micron Serial NOR Flash Memory 3V, Multiple I/O, 4KB Sector Erase N25Q512A

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N25Q512A13GF840E Datasheet, PDF (65/91 Pages) Micron Technology – Micron Serial NOR Flash Memory 3V, Multiple I/O, 4KB Sector Erase N25Q512A

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512Mb, Multiple I/O Serial Flash Memory

ERASE Operations

mand to a sector that is in an erase suspend state; it also sets the flag status register bit 4

to 1, program failure/protection error, and leaves the write enable latch bit unchanged.

The commands allowed during an erase suspend state are shown in the Operations Al-

lowed/Disallowed During Device States table. When the ERASE resumes, it does not

check the new lock status of the WRITE LOCK REGISTER command.

During a PROGRAM SUSPEND operation, a READ operation is possible in any page ex-

cept the one in a suspended state. Reading from a page that is in a suspended state will

output indeterminate data. The commands allowed during a program suspend state in-

clude the WRITE VOLATILE CONFIGURATION REGISTER command and the WRITE

ENHANCED VOLATILE CONFIGURATION REGISTER command.

It is possible to nest a PROGRAM/ERASE SUSPEND operation inside a PROGRAM/

ERASE SUSPEND operation just once. Issue an ERASE command and suspend it. Then

issue a PROGRAM command and suspend it also. With the two operations suspended,

the next PROGRAM/ERASE RESUME command resumes the latter operation, and a sec-

ond PROGRAM/ERASE RESUME command resumes the former (or first) operation.

Table 28: Suspend Parameters

Parameter

Erase to suspend

Program to suspend

Subsector erase to sus-

pend

Suspend latency

Condition

Sector erase or erase resume to erase suspend

Program resume to program suspend

Subsector erase or subsector erase resume to erase sus-

pend

Program

Subsector erase

Erase

Typ Max Units Notes

700

Âµs

Notes:

1. Timing is not internally controlled.

2. Any READ command accepted.

3. Any command except the following are accepted: SECTOR, SUBSECTOR, or DIE ERASE;

WRITE STATUS REGISTER; WRITE NONVOLATILE CONFIGURATION REGISTER; and PRO-

GRAM OTP.

PDF: 09005aef84752721

n25q_512mb_1ce_3V_65nm.pdf - Rev. O 05/13 EN

Micron Technology, Inc. reserves the right to change products or specifications without notice.

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