N25Q512A13GF840E Datasheet, PDF (80/91 Pages) Micron Technology – Micron Serial NOR Flash Memory 3V, Multiple I/O, 4KB Sector Erase N25Q512A

512Mb, Multiple I/O Serial Flash Memory
Absolute Ratings and Operating Conditions
Absolute Ratings and Operating Conditions
Stresses greater than those listed may cause permanent damage to the device. This is a
stress rating only. Exposure to absolute maximum rating for extended periods may ad-
versely affect reliability. Stressing the device beyond the absolute maximum ratings may
cause permanent damage.
Table 35: Absolute Ratings
Symbol
T_STG
T_LEAD
V_CC
V_PP
V_IO
V_ESD
Parameter
Storage temperature
Lead temperature during soldering
Supply voltage
Fast program/erase voltage
Input/output voltage with respect to ground
Electrostatic discharge voltage
(human body model)
Min
–65
–
–0.6
–0.2
–0.6
–2000
Max
150
See note 1
4.0
10
V_CC + 0.6
2000
Units
°C
°C
V
V
V
V
Notes
3, 4
2
Notes:
1. Compliant with JEDEC Standard J-STD-020C (for small-body, Sn-Pb or Pb assembly),
RoHS, and the European directive on Restrictions on Hazardous Substances (RoHS)
2002/95/EU.
2. JEDEC Standard JESD22-A114A (C1 = 100pF, R1 = 1500Ω, R2 = 500Ω).
3. During signal transitions, minimum voltage may undershoot to –1V for periods less than
10ns.
4. During signal transitions, maximum voltage may overshoot to V_CC + 1V for periods less
than 10ns.
Table 36: Operating Conditions
Symbol
V_CC
V_PPH
T_A
Parameter
Supply voltage
Supply voltage on V_PP
Ambient operating temperature
Min
2.7
8.5
–40
Max
3.6
9.5
85
Units
V
V
°C
Table 37: Input/Output Capacitance
Note 1 applies to entire table
Symbol Description
Test Condition
Min
Max
C_IN/OUT
Input/output capacitance
(DQ0/DQ1/DQ2/DQ3)
V_OUT = 0V
–
8
C_IN
Input capacitance (other pins)
V_IN = 0V
–
6
Note: 1. These parameters are sampled only, not 100% tested. T_A = 25°C at 54 MHz.
Units
pF
pF
PDF: 09005aef84752721
n25q_512mb_1ce_3V_65nm.pdf - Rev. O 05/13 EN
80
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