N25Q512A13GF840E Datasheet, PDF (46/91 Pages) Micron Technology – Micron Serial NOR Flash Memory 3V, Multiple I/O, 4KB Sector Erase N25Q512A

512Mb, Multiple I/O Serial Flash Memory
READ MEMORY Operations
Table 26: Command/Address/Data Lines for READ MEMORY Commands – 4-Byte Address (Contin-
ued)
Notes 1 and 2 apply to entire table
STR Mode
DTR Mode
Quad SPI Protocol
Supported
Command Input
Address Input
Data Output
READ
03/13
–
No
–
–
–
FAST
READ
0B/0C
0D
Command Name (4-Byte Address)
DUAL OUTPUT
FAST READ
DUAL
INPUT/OUTPUT
FAST READ
QUAD OUTPUT
FAST READ
3B/3C
BB/BC
6B/6C
3D
BD
6D
QUAD
INPUT/OUTPUT
FAST READ
EB/EC
ED
Yes
No
DQ[3:0]
–
DQ[3:0]
–
DQ[3:0]
–
No
Yes
Yes
–
DQ[3:0]
DQ[3:0]
–
DQ[3:0]
DQ[3:0]
–
DQ[3:0]
DQ[3:0]
Notes:
1. Yes in the "Supported' row for each protocol indicates that the command in that col-
umn is supported; when supported, a command's functionality is identical for the entire
column regardless of the protocol. For example, a FAST READ functions the same for all
three protocols even though its data is input/output differently depending on the pro-
tocol.
2. Command codes 13, 0C, 3C, BC, 6C, and EC do not need to be set up in the addressing
mode; they will work directly in 4-byte addressing mode.
3. A 4-BYTE FAST READ command is similar to 4-BYTE READ operation, but requires dum-
my clock cycles following the address bytes and can operate at a higher frequency (^fC).
PDF: 09005aef84752721
n25q_512mb_1ce_3V_65nm.pdf - Rev. O 05/13 EN
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