N25Q512A13GF840E Datasheet, PDF (42/91 Pages) Micron Technology – Micron Serial NOR Flash Memory 3V, Multiple I/O, 4KB Sector Erase N25Q512A

512Mb, Multiple I/O Serial Flash Memory
READ IDENTIFICATION Operations
Table 24: Parameter ID (Continued)
Description
Byte
Address
Bits
Supports DUAL OUTPUT FAST READ operation (single input address,
32h
0
dual output)
Number of address bytes used (3-byte or 4-byte) for array READ,
2:1
WRITE, and ERASE commands
Supports double transfer rate clocking
3
Supports DUAL INPUT/OUTPUT FAST READ operation (dual input ad-
4
dress, dual output)
Supports QUAD INPUT/OUTPUT FAST READ operation (quad input
5
address, quad output)
Supports QUAD OUTPUT FAST READ operation (single input address,
6
quad output)
Reserved
7
Reserved
33h
7:0
Flash size (bits)
34h
7:0
35h
7:0
36h
7:0
37h
7:0
Number of dummy clock cycles required before valid output from
38h
4:0
QUAD INPUT/OUTPUT FAST READ operation
Number of XIP confirmation bits for QUAD INPUT/OUTPUT FAST
7:5
READ operation
Command code for QUAD INPUT/OUTPUT FAST READ operation
39h
7:0
Number of dummy clock cycles required before valid output from
3Ah
4:0
QUAD OUTPUT FAST READ operation
Number of XIP confirmation bits for QUAD OUTPUT FAST READ op-
7:5
eration
Command code for QUAD OUTPUT FAST READ operation
3Bh
7:0
Number of dummy clock cycles required before valid output from
3Ch
4:0
DUAL OUTPUT FAST READ operation
Number of XIP confirmation bits for DUAL OUTPUT FAST READ oper-
7:5
ation
Command code for DUAL OUTPUT FAST READ operation
3Dh
7:0
Number of dummy clock cycles required before valid output from
3Eh
4:0
DUAL INPUT/OUTPUT FAST READ operation
Number of XIP confirmation bits for DUAL INPUT/OUTPUT FAST
7:5
READ
Command code for DUAL INPUT/OUTPUT FAST READ operation
3Fh
7:0
512Mb
Data
1
01b
1
1
1
1
1
FFh
FFh
FFh
FFh
1Fh
01001b
001b
EBh
00111b
001b
6Bh
00111b
001b
3Bh
00111b
001b
BBh
PDF: 09005aef84752721
n25q_512mb_1ce_3V_65nm.pdf - Rev. O 05/13 EN
42
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