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| MT40A512M16HA-083EIT Datasheet, PDF (301/373 Pages) Micron Technology – Programmable data strobe preambles | |||
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8Gb: x4, x8, x16 DDR4 SDRAM
Electrical Characteristics â On-Die Termination Characteristics
Figure 237: Alert Driver
Alert driver
'5$0
RONPD
IPD
IOUT
Alert
VOUT
VSSQ
RONPD when RONPU is off:
VOUT
RONPD = IOUT
Table 126: Alert Driver Voltage
RON,nom
N/A
Register
RONPD
VOUT
VOL(DC) = 0.1 Ã VDDQ
VOM(DC) = 0.8 Ã VDDQ
VOH(DC) = 1.1 Ã VDDQ
Note: 1. VDDQ voltage is at VDDQ(DC).
Min
0.3
0.4
0.4
Nom
N/A
N/A
N/A
Max
1.2
1.12
1.4
Unit
RZQ/7
RZQ/7
RZQ/7
Electrical Characteristics â On-Die Termination Characteristics
ODT Levels and I-V Characteristics
On-die termination (ODT) effective resistance settings are defined and can be selected
by any or all of the following options:
⢠MR1[10:8] (RTT(NOM)): Disable, 240 ohms, 120 ohms, 80 ohms, 60 ohms, 48 ohms, 40
ohms, and 34 ohms.
⢠MR2[11:9] (RTT(WR)): Disable, 240 ohms,120 ohms, and 80 ohms.
⢠MR5[8:6] (RTT(Park)): Disable, 240 ohms, 120 ohms, 80 ohms, 60 ohms, 48 ohms, 40
ohms, and 34 ohms.
ODT is applied to the following inputs:
⢠x4: DQ, DM_n, DQS_t, and DQS_c inputs.
⢠x8: DQ, DM_n, DQS_t, DQS_c, TDQS_t, and TDQS_c inputs.
⢠x16: DQ, LDM_n, UDM_n, LDQS_t, LDQS_c, UDQS_t, and UDQS_c inputs.
A functional representation of ODT is shown in the figure below.
09005aef861d1d4a
8gb_ddr4_dram.pdf - Rev. G 1/17 EN
301
Micron Technology, Inc. reserves the right to change products or specifications without notice.
 2015 Micron Technology, Inc. All rights reserved.
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