MT40A512M16HA-083EIT Datasheet, PDF (220/373 Pages) Micron Technology – Programmable data strobe preambles

8Gb: x4, x8, x16 DDR4 SDRAM
WRITE Operation
WRITE Operation
Write Timing Definitions
The write timings shown in the following figures are applicable in normal operation
mode, that is, when the DLL is enabled and locked.
Write Timing – Clock-to-Data Strobe Relationship
The clock-to-data strobe relationship is shown below and is applicable in normal oper-
ation mode, that is, when the DLL is enabled and locked.
Rising data strobe edge parameters:
• ^tDQSS (MIN) to ^tDQSS (MAX) describes the allowed range for a rising data strobe edge
relative to CK.
• ^tDQSS is the actual position of a rising strobe edge relative to CK.
• ^tDQSH describes the data strobe high pulse width.
• ^tWPST strobe going to HIGH, nondrive level (shown in the postamble section of the
graphic below).
Falling data strobe edge parameters:
• ^tDQSL describes the data strobe low pulse width.
• ^tWPRE strobe going to LOW, initial drive level (shown in the preamble section of the
graphic below).
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8gb_ddr4_dram.pdf - Rev. G 1/17 EN
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