IS61NSCS25672 Datasheet, PDF (28/32 Pages) Integrated Silicon Solution, Inc – RAM 256K x 72, 512K x 36 18Mb Synchronous SRAM

IS61NSCS25672
IS61NSCS51236
ISSI ^®
JTAG DC RECOMMENDED OPERATING CONDITIONS (TA = 0 to 85°C)
Symbol
VTIH
VTIL
VTOH
VTOL
ITLI
Parameter
JTAG Input High Voltage
JTAG Input Low Voltage
JTAG Output High Voltage CMOS
TTL
JTAG Output Low Voltage CMOS
TTL
JTAG Input Leakage Current
Test Conditions
ITOH = -100µΑ
ITOH = -8m Α
ITOL = 100µΑ
ITOL = 8m Α
VTIN=GND to VCC
Min.
1.2
-0.3
VCC-0.1
VCC-0.4
—
—
-10
Max.
VCC +0.3
0.6
—
—
0.1
0.4
10
Unit
V
V
V
V
µΑ
JTAG AC TEST CONDITIONS (VCC = 1.8V ±0.1V, TA = 0 to 85°C)
Symbol
VTIH
VTIL
Parameter
JTAG Input High Voltage
JTAG Input Low Voltage
JTAG Input Rise & Fall Time
JTAG Input Reference Level
JTAG Output Reference Level
JTAG Output Load Condition
Test Conditions
Unit
1.6
V
0.2
V
1.0
V/ns
0.9
V
0.9
V
see AC TEST LOADS
28
Integrated Silicon Solution, Inc. — 1-800-379-4774
ADVANCE INFORMATION Rev. 00A
06/19/01