IS61NSCS25672 Datasheet, PDF (18/32 Pages) Integrated Silicon Solution, Inc – RAM 256K x 72, 512K x 36 18Mb Synchronous SRAM

IS61NSCS25672
IS61NSCS51236
AC TEST CONDITIONS
(VCC = 1.8V ± 0.1V, TA = 0 to 85°C)
Parameter
Symbol
Conditions
VCCQ
1.5V±0.1
1.8 ±0.1
Input High Level
VIH
1.25
1.4
Input Low Level
VIL
0.25
0.4
Input Rise & Fall Time
2.0
2.0
Input Reference Level
0.75
0.9
Clock Input High Voltage
VKIH
1.25
1.4
Clock Input Low Voltage
VKIL
0.25
0.4
Clock Input Rise & Fall Time
2.0
2.0
Clock Input Reference Level
0.75
0.9
Output Reference Level
0.75
0.9
Output Load Conditions ZQ = VIH
see below
see below
Notes:
1. Include scope and jig capacitance.
2. Test conditions as specified with output loading as shown unless otherwise noted.
ISSI ^®
Units
V
V
V
V/ns
V
V
V
V/ns
V
V
AC TEST LOADS
VCCQ = 1.5V
16.7Ω
DQ
16.7Ω
16.7Ω
0.75V
50Ω
50Ω
5 pF
50Ω
5 pF
50Ω
0.75V
Figure 1 (VCCQ = 1.5V)
VCCQ = 1.8V
16.7Ω
DQ
16.7Ω
16.7Ω
0.9V
50Ω
50Ω
5 pF
50Ω
5 pF
50Ω
0.9V
Figure 2 (VCCQ = 1.8V)
18
Integrated Silicon Solution, Inc. — 1-800-379-4774
ADVANCE INFORMATION Rev. 00A
06/19/01