IS61NSCS25672 Datasheet, PDF (16/32 Pages) Integrated Silicon Solution, Inc – RAM 256K x 72, 512K x 36 18Mb Synchronous SRAM

IS61NSCS25672
IS61NSCS51236
ISSI ^®
Current State & Next State Definition for Read/Write Control State Diagram
n
n+1
n+2
n+3
CK
Command
ƒ
ƒ
Current State Next State
ƒ
ƒ
KEY
Input Command Code
ƒ Transition
Current State (n) Next State (n+1)
ABSOLUTE MAXIMUM RATINGS
(All voltages reference to GND )
Symbol
Description
Value
Unit
VCC
Voltage on VCC Pins
–0.5 to 2.5
V
VCCQ
VI/O
Voltage in VCCQ Pins
Voltage on I/O Pins
–0.5 to 2.3V
V
–0.5 to VCCQ +0.5 (≤ 2.3 V max.)
V
VIN
Voltage on Other Input Pins
–0.5 to VCCQ +0.5 (≤ 2.3 V max.)
V
IIN
Input Current on Any Pin
±100
mA dc
IOUT
Output Current on Any Pin
±100
mA dc
TJ
Maximum Junction Temperature
125
°C
TSTG
Storage Temperature
-55 to 125
°C
Note:
Permanent device damage may occur if Absolute Maximum Ratings are exceeded. Operation should be limited to Recommended
Operating Conditions. Exposure to conditions exceeding Recommended Operating Conditions, for an extended period of time, may
affect reliability of this component.
POWER SUPPLY CHARACTERISTICS (TA = 0 min., 25 typ, 70 max °C)
Symbol
Parameter
Min.
Typ.
Max.
Unit
VCC
Supply Voltage
1.7
1.8
1.9
V
VCCQ⁽¹⁾
1.8 V I/O Supply Voltage
1.5 V I/O Supply Voltage
1.7
1.8
VCC
V
1.4
1.5
1.6 V
V
Note:
1. Unless otherwise noted, all performance specifications quoted are evaluated for worst case at both 1.4 V ≤ VCCQ ≤ 1.6V
(i.e., 1.5 V I/O) and 1.7 V ≤ VCCQ ≤ 1.95 V (i.e., 1.8 V I/O) and quoted at whichever condition is worst case.
16
Integrated Silicon Solution, Inc. — 1-800-379-4774
ADVANCE INFORMATION Rev. 00A
06/19/01