IS61NSCS25672 Datasheet, PDF (20/32 Pages) Integrated Silicon Solution, Inc – RAM 256K x 72, 512K x 36 18Mb Synchronous SRAM

IS61NSCS25672
IS61NSCS51236
ISSI ^®
OPERATING CURRENTS
Symbol Parameter
Test Conditions
ICCP Pipeline Operating Current
E1 < VIL Max.
Pipeline x72
tKHKH > tKHKH Min.
x36
All other inputs Flow-through x72
ICCF Flow-throughOperatingCurrent VIL = VIN > VIH
x36
ISB1 Bank Deselect Current
&
&
ISB2 Chip Disable Current
E1 < VIH Min. or
E2 or E3 False
tKHKH > tKHKH Min.
All other inputs
VIL > VIN > VIH
Pipeline x72
x36
Flow-through x72
x36
IDD3 CMOS Deselect Current
Device Deselected
Pipeline x72
All inputs
x36
GND+0.10V > VIN > VCC–0.10V
Flow-through x72
x36
ICC Average Power Supply
Operating Current
IOUT = 0mA
VIN = VIH or VIL
Pipeline x72
x36
Flow-through x72
x36
ICC2 Power Supply Deselect
Operating Current
IOUT = 0mA
VIN = VIH or VIL
Pipeline x72
x36
Flow-through x72
x36
Note: Com.=0°Cto70°C
Ind. = –40°C to +85°C
-333
-300
-250
Units
Com. Ind. Com. Ind. Com. Ind.
mA
mA
mA
750
mA
550
250
mA
DC ELECTRICAL CHARACTERISTICS
(VCC = 1.8V ±0.1V, GND = 0V, TA = 0° to 85°C)
Symbol
ILI
IMLI
IDLI
Parameter
Input Leakage Current
(Address, Control, Clock)
Input Leakage Current
(EP2, EP3, M2, M3, M4, ZQ)
Input Leakage Current
(Data)
Test Conditions
VIN = GND to VCCQ
VMIN = GND to VCC
VDIN = GND to VCCQ
Min Typ Max Units
-5
—
5
uA
-10 —
10
uA
-10 —
10
uA
20
Integrated Silicon Solution, Inc. — 1-800-379-4774
ADVANCE INFORMATION Rev. 00A
06/19/01